Speaker
Description
This study investigates the gain behavior and time resolution of novel small pitch, 250 µm-thick, Trench-isolated Low Gain Avalanche Detectors (TI-LGADs) fabricated by
Micron Semiconductor Ltd. Sentaurus TCAD software was used to model charge distribution and fields within each of the designs before fabrication. Single Photon Absorption Transient Current Technique (SPA-TCT) characterization was performed on the devices at an in-house lab at University of Edinburgh to study the dependence of doping and trench geometry on gain and time resolution. Small-pitch silicon pixel detectors with precise timing information will be a key tool for future particle detectors, and offer opportunities in widespread applications beyond HEP. Low Gain Avalanche Detectors are a promising technology to reach this goal. Specifically, TI-LGADs are candidates for VELO device technology in Upgrade II for HL-LHC, however, TI-LGADs could in theory be used for any low-penetrating, high-isolation, particle detection whether that be in particle physics, medicine, or otherwise.