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Monolithic chips that integrate sensors and electronics can significantly reduce the material budget and system complexity caused by interconnections. Low Gain Avalanche Detectors (LGADs), featuring picosecond-level time resolution, are widely used in particle physics experiments, and the Monolithic LGAD represents a crucial future development direction for this technology. The monolithic design integrates the LGAD sensor and front-end readout electronics onto the same substrate, thereby enhancing cost-effectiveness and expanding the application range of LGADs. This paper presents a novel monolithic LGAD structure that achieves sensor-electronics integration by depositing an epitaxial layer on top of the LGAD for the fabrication of electronic circuits.
Based on two-dimensional Technology Computer-Aided Design (TCAD) process and device simulations, this study analyzes the impact of key parameters on the performance of the monolithic LGAD sensor, including the doping concentration and thickness of the epitaxial layer, the doping concentration and depth of the isolation P-well for the electronic circuits, and the LGAD anode voltage. Simulation results demonstrate that an increase in the epitaxial layer thickness leads to a decrease in the LGAD breakdown voltage, while increasing the doping concentration of the isolation P-well can reduce the crosstalk between the LGAD and the electronic circuits. Furthermore, the signal response of the LGAD combined with the epitaxial electronic circuits under particle incidence is simulated. This structure provides new design insights and a theoretical basis for addressing the challenges of integrating sensors with electronics.