Speaker
Description
This contribution discusses the path towards the demonstration of hybrid X-ray detectors combining a high-stopping-power perovskite absorption layer and a CMOS silicon active layer with integrated readout electronics. Unlike typical hybrid detectors, the proposed concept features direct electron injection from the perovskite absorber into low-capacitance sensing sites, which is essential for low-noise readout. The perovskite’s high stopping power enables high detection efficiency for X-rays in the 10s keV range, potentially improving Detective Quantum Efficiency (DQE) and spatial resolution over current mainstream detectors. The silicon integrated circuit is post-processed to allow for backside deposition of perovskite material, targeting a thickness of the order of 100 μm. A gradual approach is pursued towards the final goal, starting with the fabrication of passive pad detectors and later moving to an array of active pixel detectors. Perovskite single crystals are grown using bottom-up lithography techniques (microfluidics and dewetting) to produce self-assembling, detector-grade semiconductors. The growth conditions have been optimized to first obtain a sensitive area in the mm$^2$-range, capable of covering a small-size pixel array, and providing a path to assess the scalability of the process. The first results, current challenges and future progress towards the demonstration of a hybrid perovskite-on-CMOS pixel array will be discussed at the workshop.