Speaker
Description
In the CMOS Strips Project, passive silicon strip sensors were designed by a collaboration of German institutes and fabricated in LFoundry. The sensors serve as a proof of principle to show that the CMOS technology brings a suitable solution for the fabrication of silicon strip sensors in the strip lengths required for high energy physics experiments. In this study, the TCAD simulations incorporating advanced radiation damage models, the Perugia bulk and surface model and the CERN model, are used to investigate properties of CMOS strip sensors. The leakage current and bulk capacitance are simulated using Sentaurus TCAD and the simulations are compared to measured characteristics of the sensors irradiated up to 1$\cdot$10$^{16}$ n$_{\mathrm{eq}}$/cm$^{2}$. A comparative overview of the charge collection simulations and laboratory measurement results of the CMOS strip sensors is also presented. The simulation shows a good agreement with the measurement data while providing an insight into the microscopic electrical characteristics of studied sensors.