Speaker
Description
The CASSIA (CMOS Active SenSor with Internal Amplification) project is focused on developing monolithic active pixel sensors (MAPS) with internal signal gain in the Tower 180nm CMOS process.
An internal amplification enables the simplification of the in-pixel electronics while simultaneously improving the signal to noise ratio for radiation hardness and offering the potential for excellent timing performance for future 4D tracking applications.
This presentation will focus on measurements of the first prototype sensors (CASSIA1) that have been fabricated to demonstrate the feasibility of the gain layer implementation into the Tower Semiconductor 180nm CMOS process.
Currently the second iteration of a new prototype (CASSIA2) is in production, which implements the in-pixel electronics alongside the sensor structure with gain, to operate them in either low-gain (LGAD) or high-gain (SPAD) mode.
In this presentation charge collection, gain and time resolution measurements utilising the Transient Current Technique will be presented, comparing the four different matrices with varying gain-layer designs for sensors produced in the epitaxial and in the Czochralski process.
Additionally, the waveforms are evaluated to investigate the effects of the different gain layer sizes.
Furthermore, first results of a recent beam test at CERN SPS will be shown to further explore the sensor performance and compare to the TCT results.
| Type of presentation (in-person/online) | In-person presentation |
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