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Marie Christin Muehlnikel (CERN)29/06/2026, 09:15WG3 - Radiation Damage - Extreme Fluence
The HADES project (HArdness factor and DEfect studies in Silicon) aims to provide a comprehensive dataset on particle-dependent radiation damage in silicon detectors across a broad range of particles and energies, spanning from the keV to the multi-GeV regime, including neutron, electron, proton, and gamma radiation. By combining results obtained on irradiations performed at multiple...
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Faiza Rizwan (Cern)29/06/2026, 09:35WG3 - Radiation Damage - Extreme Fluence
Study of Si detectors for radiation tolerance at extreme fluences up to 1e18 neq/cm2 has been suffering from numerous challenges. Defects created in the crystal lattice, compensate the doping by trapping the free charge carriers, causing the depletion region to collapse, resisting the utilization of conventional electrical characterization tools. Infrared absorption measurements are still...
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Ioana Pintilie (National Inst. of Materials Physics (RO))29/06/2026, 09:55WG3 - Radiation Damage - Extreme Fluence
The Gain-Layer project started in the framework of the RD50/DRD3 collaborations and is now one of the WP3 projects in DRD3. It aims to conduct a comprehensive research on defect engineered p-type pad diodes that are mimicking the gain layer in LGADs, understand the acceptor removal process in irradiated p-type Silicon and parametrise it for various content of impurities and irradiation...
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Alessandro Fondacci (University of Perugia, INFN Perugia and CERN)29/06/2026, 10:15WG3 - Radiation Damage - Extreme Fluence
Doping removal is one of the key radiation-damage mechanisms affecting the performance of Low Gain Avalanche Diodes (LGADs). In standard p-type LGADs, the degradation of the gain implant motivated detailed studies of acceptor removal at high initial doping concentrations, of the order of $10^{16}$ $\text{cm}^{-3}$. More recently, the development of new LGAD architectures, such as resistive...
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Valentina Sola (Universita e INFN Torino (IT))29/06/2026, 10:35WG3 - Radiation Damage - Extreme Fluence
Updates on the ongoing activities of the Partial Activation of Boron (PAB) common project will be given. Preliminary results will be shown. The schedule of the PAB batches from CNM and FBK will be discussed.
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56. Partial Activation of Boron for Radiation-Hard LGADs: Production and electrical characterizationSyed Muhammad Abouzar Sarfraz (fondazione bruno kessler FBK)29/06/2026, 10:55WG3 - Radiation Damage - Extreme Fluence
Low Gain Avalanche Diodes (LGADs) have become the detector technology of choice for precision timing measurements in future high-energy physics experiments, where time resolutions of a few tens of picoseconds are required. However, their performance degrades significantly under irradiation due to acceptor removal in the gain layer, a radiation-induced process that progressively reduces the...
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Koji Nakamura (KEK High Energy Accelerator Research Organization (JP))29/06/2026, 11:45WG3 - Radiation Damage - Extreme Fluence
Low-Gain Avalanche Diodes (LGADs) are fast silicon sensors with internal charge multiplication and are key candidates for precision timing layers in future high-energy hadron colliders. Their operation in harsh radiation environments, however, is limited by acceptor removal in the gain layer, which reduces the active acceptor concentration and degrades the internal electric field required for...
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Prof. Gordana Lastovicka Medin (Faculty of Natural Sciences and Mathematics, University of Montenegro (ME)), Dr Rogelio Palomo Pinto (Dept. of Electronic, Engineering School of Engineering, University of Sevilla)29/06/2026, 12:05WG3 - Radiation Damage - Extreme Fluence
In this presentation we report the first results from the feasibility study on the laser defect spectroscopy that has been conduced at the ELI ERIC using fs-laser. We are interested in spatial location of the defects (clusters) and in their type/character. The investigated methodology is based on the Transient Current Technique (TCT) using the unique wavelength-tunable femtosecond laser...
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Dr Radu-Emanuel Mihai (Institute of Experimental and Applied Physics - Czech Technical University in Prague)29/06/2026, 12:25WG3 - Radiation Damage - Extreme Fluence
Our study investigates ionizing energy losses (IEL) in silicon following fast neutron impacts between 200 keV and 15 MeV. Using a silicon Timepix3 detector at the Los Alamos Neutron Science Center (LANSCE), a time-of-flight technique was employed to precisely correlate recorded ionizing events with specific neutron energies. The research addresses the competition between IEL and non-ionizing...
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Ioanna Kalfa (CERN)29/06/2026, 14:00WG3 - Radiation Damage - Extreme Fluence
To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High-Luminosity LHC (HL-LHC) phase with respect to the LHC, the CMS detector will replace the current calorimeter endcaps (CE) with the new High Granularity Calorimeter (HGCAL). It will facilitate the use of particle flow calorimetry with its unprecedented transverse and longitudinal readout...
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Iskra Velkovska (Jozef Stefan Institute (SI))29/06/2026, 14:20WG3 - Radiation Damage - Extreme Fluence
Low-Gain Avalanche Detectors (LGADs) will be employed in the ATLAS High Granularity Timing Detector (HGTD), which will provide precision timing information during the High-Luminosity LHC era. The sensors will operate in a harsh radiation environment where, in addition to neutrons, a significant fraction of the non-ionizing energy loss (NIEL) originates from charged hadrons. Understanding the...
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Ufuk Guney Tok (Cukurova University (TR))29/06/2026, 14:40WG3 - Radiation Damage - Extreme Fluence
The High-Luminosity LHC (HL-LHC) era will expose silicon detector systems to extreme radiation levels over many years of operation, making a thorough understanding of their long-term electrical behaviour essential. As part of the CMS detector upgrades, the endcap calorimeters will be replaced by the High Granularity Calorimeter (HGCAL), which relies on silicon pad sensors from 8-inch p-type...
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Javier Fernandez-Tejero (Institut de Microelectrònica de Barcelona (IMB-CNM, CSIC) (ES))29/06/2026, 15:00WG3 - Radiation Damage - Extreme Fluence
The innermost detector layers at the hadron-hadron Future Circular Collider (FCC-hh) are expected to experience extreme fluences up to 10$^{18}$ n$_{eq}$/cm$^2$, requiring a comprehensive study of radiation damage effects on silicon sensor technology beyond the High-Luminosity Large Hadron Collider (HL-LHC) regime. This work investigates the evolution of the polysilicon bias resistance and...
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Andrew Donald Gentry (University of New Mexico (US))29/06/2026, 15:20WG3 - Radiation Damage - Extreme Fluence
Bulk and surface defects in semiconductor devices are known to cause negative effects, including increased leakage current and increased charge trapping. Radiation from both high energy photons and particles (typically neutrons or protons) increases these negative effects, and will eventually render the device unusable. Previous studies have been performed demonstrating microwave annealing as...
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Chenxi Fu (Chinese Academy of Sciences (CN))29/06/2026, 16:00WG4 - Simulations
Next-generation particle-physics experiments require detectors capable of simultaneously measuring the hit time and position of incident ionizing particles with high precision, enabling four-dimensional tracking. Conventional LGADs are limited in pixel miniaturization, which motivates the development of alternative architectures such as AC-LGADs, 3D-LGADs, and deep-junction LGADs. RASER, a...
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Nicolo Cartiglia (INFN Torino (IT))29/06/2026, 16:20WG4 - Simulations
This contribution presents a ROOT-based simulator forsignal sharing in Resistive Silicon Detectors (RSD). The program, controlled by a GUI, simulates signal sharing in a 4 ×4 pixel layout. The program allows to control several parameters such as the pixel size, the surface resistivity, the sensors thickness, the electrode shape, and the presence of trenches or resistors between electrode...
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Tommaso Croci (INFN, Perugia Unit)29/06/2026, 16:40WG4 - Simulations
Defect spectroscopy techniques such as Deep-level Transient Spectroscopy (DLTS) are essential for characterising electrically active defects that affect the performance of semiconductor materials and sensors, particularly in harsh radiation environments. This work presents an update on a TCAD simulation framework developed to reproduce DLTS spectra.
The framework has been applied to...
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Dr Timo Hannu Tapani Peltola (Texas Tech University (US))29/06/2026, 17:00WG4 - Simulations
Low Gain Avalanche Diodes (LGAD) are silicon sensors capable of achieving excellent timing resolution due to their characteristic internal avalanche mechanism for signal amplification. Capacitively-coupled LGAD sensor (AC-LGAD or Resistive AC-coupled Silicon Detector (RSD)) improves the granularity of the electrodes, and thus the spatial resolution, without decreasing the active area fraction....
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Håkan Wennlöf (Nikhef National institute for subatomic physics (NL)), Marco Mandurrino (INFN)29/06/2026, 17:20WG4 - Simulations
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Alessandro Tricoli (Brookhaven National Laboratory (US)), Anna Macchiolo (University of Zurich (CH)), Martin Van Beuzekom (Nikhef National institute for subatomic physics (NL))30/06/2026, 08:30
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Mei Zhao (Chinese Academy of Sciences (CN))30/06/2026, 08:45WG2 - Hybrid silicon sensors
AC-coupled Low-Gain Avalanche Diode (AC-LGAD) detectors have emerged as promising candidates for next-generation particle tracking systems owing to their excellent timing resolution of approximately 50 ps and spatial resolution of about 10 μm. For large-scale tracking detectors at future collider experiments, centimeter-scale strip AC-LGAD sensors are particularly important for reducing the...
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Roberta Arcidiacono (Universita e INFN Torino (IT))30/06/2026, 09:05WG2 - Hybrid silicon sensors
In this contribution, we report the results obtained by combining data from three test beams performed at DESY. DC-RSD matrices with three different pixel sizes (300, 500, and 1000 $\mu$m) were tested on the 5 GeV/c beam line. The spatial resolution shows a linear dependence on the pixel size, remaining consistently better than 5% of the pixel pitch, whereas the temporal resolution exhibits no...
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Yevhenii Padniuk (University of Zurich (CH))30/06/2026, 09:25WG2 - Hybrid silicon sensors
Trench-Isolated Low-Gain Avalanche Detectors (TI-LGADs) are a promising technology for future silicon timing detectors, combining excellent time resolution with fine segmentation and reduced inactive regions between pads. Within the AIDAinnova framework, a dedicated TI-LGAD production was carried out at FBK to investigate different wafer and design parameters aimed at optimizing the detector...
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Neil Moffat (Consejo Superior de Investigaciones Cientificas (CSIC) (ES))30/06/2026, 09:45WG2 - Hybrid silicon sensors
Low Gain Avalanche Detectors (LGADs) are silicon sensors fabricated with a tailored, enhanced electric field layer, which provides internal charge multiplication (gain) that amplifies the output signal and enables an excellent signal-to-noise ratio. Their stable and controlled moderate gain (up to 50), together with an exceptional timing resolution on the order of a few tens of picoseconds,...
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Tomas Ceponis (Vilnius University)30/06/2026, 10:05WG2 - Hybrid silicon sensors
Low Gain Avalanche Detectors (LGADs) are silicon sensors that combine moderate internal charge multiplication with excellent timing performance, reaching resolutions of a few tens of picoseconds. While conventional LGADs are typically based on p-type substrates and optimized for high-energy particle detection, n-type LGADs (nLGADs) have recently emerged as promising candidates for low-energy...
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JIA JIAN TEOH (中国科学院高能物理研究所(IHEP))30/06/2026, 10:55WG2 - Hybrid silicon sensors
AC-coupled Low-Gain Avalanche Detectors (AC-LGADs) are a promising 4D silicon detector technology for future high-energy physics collider experiments such as CEPC and FCC, offering excellent timing and spatial resolution. This contribution presents recent progress from our team in AC-LGAD sensor R&D, dedicated readout ASIC development (LATRIC), and the establishment of a comprehensive detector...
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Jairo Antonio Villegas Dominguez (Universidad de Sevilla (US) - Centro Nacional de Aceleradores)30/06/2026, 11:15WG2 - Hybrid silicon sensors
Low Gain Avalanche Detectors (LGADs) have emerged as key sensors for High Energy Physics and related applications due to their excellent time resolution and enhanced signal-to-noise ratio. However, their use in low-energy ion spectrometry has generally been limited by gain suppression effects, arising from the high ionization densities produced by such ions within the multiplication layer,...
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Luca Menzio (CERN)30/06/2026, 11:35WG2 - Hybrid silicon sensors
Over the last decade, Low-Gain Avalanche Diode sensors (LGADs) and Resistive Silicon Detectors (RSDs) have significantly advanced silicon detector capabilities. LGAD sensors provide much improved time resolution thanks to the fast and large signals with optimised signal-to-noise ratio, achieving resolutions of 30 ps or lower with 50 um-thick sensors. The addition of a resistive readout to...
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Valentina Sola (Universita e INFN Torino (IT))30/06/2026, 11:55WG2 - Hybrid silicon sensors
The results from an innovative batch of Low-Gain Avalanche Diodes (LGADs) produced by the Fondazione Bruno Kessler (FBK, Italy) will be presented.
The sensors are p-in-n LGADs, where the high-concentration implant that generates charge-carrier multiplication is provided by an n-type dopant (nLGAD). The nLGADs are produced on thin epitaxial n-type substrates, with an active thickness of 55...
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Dr Simone Michele Mazza (University of California,Santa Cruz (US))30/06/2026, 12:15WG2 - Hybrid silicon sensors
A report on the DJ-LGAD and adaptive gain layer RD50 project
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Marius Mæhlum Halvorsen (SINTEF)30/06/2026, 12:35WG2 - Hybrid silicon sensors
Low Gain Avalanche Diodes (LGADs) have evolved into a key technology in high-energy physics and several other fields. SINTEF initiated its LGAD development with a focus on devices tailored for the detection of shallowly interacting, low energy radiation such as soft X-rays and low-energy electrons. In this context, the internal gain is used to enhance small signals that would otherwise be...
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chuan liao (The High Energy Accelerator Research Organization)30/06/2026, 13:45WG2 - Hybrid silicon sensors
In this work, we investigate the timing performance and uniformity of double-sided p-type 3D silicon sensors produced by the Centro Nacional de Microelectrónica (CNM) on high-resistivity Czochralski silicon substrates. The studied devices consist of 5 × 5 pixel matrices with hexagonal and square electrode geometries and inter-electrode spacings of 30 μm and 50 μm.
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The sensors were first... -
Manwen Liu (Chinese Academy of Sciences (CN))30/06/2026, 14:05
3D sensors have demonstrated outstanding performance, including radiation resistance, fast response, detection efficiency, power consumption, etc., especially after high radiation fluences. This is mainly due to the shorter drift distance of carriers. These characteristics make them the most attractive sensor technology for charged particle detection and trajectory reconstruction in...
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Evridki Chatzianagnostou (Nikhef National institute for subatomic physics (NL))30/06/2026, 14:25WG2 - Hybrid silicon sensors
A novel 3D silicon sensor produced by IMECAS, combining ultra-thin etched columns and trenches, is presented and studied for its timing performance. Several test structures with different electrode widths and pixel pitches were characterized through electrical measurements, laser, and SPS testbeam data.
The devices were first tested using IV and CV measurements. Their timing performance was...
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Prof. Gordana Lastovicka-Medin (Faculty of Natural Sciences and Mathematics, University of Montenegro)30/06/2026, 14:45WG2 - Hybrid silicon sensors
This contribution presents the results of a comprehensive and extensive experimental campaign conducted at the ELI-ERIC facility, focusing on the performance of irradiated and non-irradiated 3D silicon detectors. The investigated sensors include 3D Trench (35 x 35 x 30 um3) and 3D cylindrical single- and multi-pixel devices with column diameters of 10 and 20 um. These advanced structures were...
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Maurizio Boscardin (Fondazione Bruno Kessler (IT))30/06/2026, 15:05WG2 - Hybrid silicon sensors
This contribution presents the results of the recently completed Si3D production run at FBK, developed in collaboration with INFN Cagliari and University of Trento. The production was mainly aimed at improving the timing performance and radiation hardness of next-generation 3D silicon pixel detectors.
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The sensors were designed with pixel pitches of 45 μm and 55 μm, including both... -
Huimin Ji (the Institute of Microelectronics of Chinese Academy of Sciences)30/06/2026, 15:25
This study presents a novel planar-circular composite 3D trench silicon detector. The device has already been fabricated on a p-type epitaxial layer via an 8-inch CMOS-compatible process at IMECAS. Comprehensive characterizations based on TCAD simulations, electrical measurements, and the transient current technique (TCT) verify that the optimized composite structure achieves uniform electric...
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Dominik Dannheim (CERN), Fabian Huegging (University of Bonn (DE)), Giovanni Calderini (LPNHE-Paris, Centre National de la Recherche Scientifique (FR))30/06/2026, 16:00
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Dr Ahmet Lale30/06/2026, 16:05WG7 - Interconnect
Hybrid pixel detector developments strongly rely on fast, reliable and cost-effective interconnection technologies, particularly during prototyping phases. Conventional wafer-level hybridisation techniques provide excellent performance but require complex industrial infrastructures, long turnaround times and high production costs. These constraints limit rapid design iterations and reduce...
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30/06/2026, 16:25
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Angelo Loi (Universita e INFN, Cagliari (IT))30/06/2026, 16:40WG7 - Interconnect
The development of advanced IC packaging, such as hybridization in hybrid pixel detectors, for high-energy physics (HEP) typically requires complex bonding techniques that are highly demanding in terms of both time and costs. This challenge is particularly pronounced in single-die R&D, where bonding only a few dies is disproportionately high in terms of costs and time.
As a low-cost and...
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Mateus Vicente (Geneva Connection Technologies)30/06/2026, 17:00WG7 - Interconnect
Hybrid pixel detector R&D requires flexible interconnection technologies that can support small-volume prototyping, rapid design iterations and increasingly fine pixel pitches. Indium bump bonding is a well-established approach in HEP detector production and remains attractive as pitches decrease, offering a complementary route to adhesive-based bonding techniques such as ACF.
This...
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Julian Weick (CERN)30/06/2026, 17:20WG7 - Interconnect
The increasing integration density of silicon pixel sensors, together with emerging applications such as module-level power conversion and enhanced on-detector signal processing, significantly raises the demand for advanced thermal management solutions. Efficient heat removal at the module level is becoming a critical requirement for ensuring stable and reliable operation. In this work, we...
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Andreas Ulm30/06/2026, 17:40WG7 - Interconnect
Silicon Pixel Detectors are an essential part of most modern tracking systems for high energy physics as they can fulfill requirements of high spacial and time resolution, feasible power consumption and relatively low material budget. To cover large areas in the detector volume individual chips are glued together to create modules. These modules are easier to assemble to full tracking systems,...
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Milos Manojlovic (Consejo Superior de Investigaciones Cientificas (CSIC) (ES))01/07/2026, 08:30WG2 - Hybrid silicon sensors
In this contribution, we report on the use of Low Gain Avalanche Detectors (LGADs) as fast diagnostics in a high-intensity laser-driven proton–boron (p–B) fusion experiment conducted at the ELI-ERIC facility in the Czech Republic, organized under the PROBONO COST Action (CA21128).
p-type deep-multiplication-layer LGAD (dLGAD) and n-type LGAD (nLGAD) sensors from IMB-CNM production were...
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Esther Constanze Wais (Hamburg University (DE))01/07/2026, 08:50WG2 - Hybrid silicon sensors
MARTHA (Monolithic Array of Reach-Through Avalanche Diodes) is a novel LGAD concept developed for future high-granularity timing detectors requiring simultaneous precision timing and high spatial resolution, as envisioned for next-generation collider experiments such as FCC-ee. By introducing an additional low-doped n-layer between the n$^{+}$ contact and the gain layer, the electric field...
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Gaetano Barone (Brown University)01/07/2026, 09:10WG2 - Hybrid silicon sensors
Resistive Silicon Devices (RSDs), particularly AC-coupled Low Gain Avalanche Diodes (AC-LGADs), open the path for picosecond-level space and time (4D) tracking in high-energy physics (HEP) experiments such as those at the Large Hadron Collider (LHC), Electron-Ion Collider (EIC), and future (lepton) collider facilities. These sensors combine the fine spatial resolution of segmented detectors...
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Gaobo Xu (Institute of Microelectronics of Chinese Academy of Sciences)01/07/2026, 09:30
X-ray free-electron lasers (XFELs) feature ultra-high brightness, ultrashort pulses and ultra-high repetition rates, and serve as advanced large scientific facilities for exploring material structures and ultrafast dynamic processes of matter. The Shanghai High-Intensity Hard X-ray Free-Electron Laser Facility (SHINE), China’s first hard X-ray free-electron laser facility currently under...
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jiahan Yu (Institute of Microelectronics, Chinese Academy of Sciences)01/07/2026, 09:50
Short-wave infrared (SWIR) photodetectors with high responsivity and low dark current are highly desired for applications in optical communication, infrared imaging, and integrated photonic systems. In this work, resonant-cavity-enhanced (RCE) Ge-on-insulator (GOI) PIN photodetectors incorporating distributed Bragg reflector (DBR) structures were designed, fabricated, and experimentally...
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Eva Vilella Figueras (University of Liverpool (GB)), Heinz Pernegger (CERN), Jerome Baudot (IPHC - Strasbourg)01/07/2026, 10:30
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Juan Ignacio Drovandi (Consejo Superior de Investigaciones Cientificas (CSIC) (ES))01/07/2026, 10:40WG1 - Monolithic Sensors
The CACTUS (CMOS ACtive pixel Timing Sensor) project aims to develop radiation-hard monolithic sensors with excellent timing performance in a standard CMOS process. The latest prototype, MiniCACTUS-v2, has achieved timing resolution in the 50 ps regime using drift-only depleted CMOS sensors fabricated in the 150 nm LFoundry HV-CMOS process on high-resistivity p-type substrates.
To further...
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Raimon Casanova Mohr (IFAE - Barcelona (ES))01/07/2026, 11:03WG1 - Monolithic Sensors
MiniCACTUS is a series of large collecting electrode monolithic sensor prototypes developed for precision timing applications in future large-area timing detectors for high-energy physics experiments. These have been fabricated with a 150 nm HV-CMOS process from LFoundry. The most recent prototype, MiniCACTUSV2, incorporates several pixel sizes, ranging from 1×1 mm2 down to 500×500 μm2. The...
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Stefano Terzo (IFAE Barcelona (ES))01/07/2026, 11:26WG1 - Monolithic Sensors
MiniCACTUS is a series of large fill-factor monolithic sensor prototypes developed for precision timing applications in future large-area timing detectors for high-energy physics experiments. The devices are fabricated in the 150 nm LFoundry HV-CMOS technology on high-resistivity p-type substrates, where charge collection is achieved through a deep n-well electrode.
The most recent...
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Prof. Philippe Schwemling (Université Paris-Saclay (FR))01/07/2026, 11:49WG1 - Monolithic Sensors
The Cactus line of sensor demonstrators is focused on the investigation of timing performance that can be reached with non amplified sensors, as well as with sensors with intrinsic gain.
Test structures featuring an integrated gain layer in the form of a buried PN junction have been submitted as part of an MPW run in 2024 in the Lfoundry 150 nm LF15A process. Four wafers have been produced...
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Leena Diehl (University of Zurich (CH))01/07/2026, 12:12WG1 - Monolithic Sensors
The CASSIA (CMOS Active SenSor with Internal Amplification) project is focused on developing monolithic active pixel sensors (MAPS) with internal signal gain in the Tower 180nm CMOS process.
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An internal amplification enables the simplification of the in-pixel electronics while simultaneously improving the signal to noise ratio for radiation hardness and offering the potential for excellent... -
Ioannis Kopsalis (National Technical Univ. of Athens (GR))01/07/2026, 12:35WG1 - Monolithic Sensors
The need for 4D (fast timing in addition to 3D resolution in space) silicon particle detectors has become very apparent with the introduction of the High-Luminosity (HL) upgrade at the LHC. Timings on the order of tens of picoseconds will allow better reconstruction of the ~200 primary vertices along the beam line in every bunch crossing. Correct association of tracks with primary vertices is...
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Floris Patrick Jan Fassin (University of Groningen (NL))02/07/2026, 09:00WG6 - Wide bandgap materials
The wide bandgap 4H-SiC semiconductor material exhibits several intrinsic properties, including excellent radiation hardness, thermal stability, and high breakdown voltage, making it a promising candidate for deployment in high-radiation environments. Recent advances in its industrial-scale production have further enhanced its attractiveness for high-energy physics applications. This...
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Congcong Wang (Chinese Academy of Sciences (CN))02/07/2026, 09:20WG6 - Wide bandgap materials
Silicon carbide detectors exhibit good detection performance and have been studied for various detection applications. However, in some applications the presence of metal is undesirable, such as low-penetration particle detection, UV light detection and medical dosimetry. A graphene-optimized 4H-SiC detector has been fabricated not only meet the aforementioned detection requirements, but also...
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Xiyuan Zhang (Chinese Academy of Sciences (CN))02/07/2026, 09:40WG6 - Wide bandgap materials
This abstract reports on the design, fabrication, and characterization of the SICAR 3 4H SiC low gain avalanche detector (LGAD) implemented on a 350 nm SiC MOSFET process platform. Unlike previous SICAR 1 and SICAR 2 generations that relied on epitaxy defined structures, the SICAR 3 device employs an ion implantation based process to form the gain layer, junction termination extension (JTE),...
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Francesco Moscatelli (IOM-CNR and INFN, Perugia (IT))02/07/2026, 10:00WG6 - Wide bandgap materials
The demand for radiation-hard 4D detectors capable of simultaneous high-precision timing and spatial resolution is driving the investigation of 4H-Silicon Carbide (4H-SiC) as a robust alternative to silicon. While 4H-SiC offers superior thermal stability and radiation tolerance, its wide bandgap and current epitaxial thickness limits necessitate the use of internal charge multiplication. This...
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Haris Lambropoulos (National and Kapodistrian University of Athens)02/07/2026, 14:00WG1 - Monolithic Sensors
DMAPS can become a disruptive technology for miniaturized space instrumentation. Developments studied in the context of DRD3 collaboration can find applications in proton, ion and electron flux measurement problems encountered in heliophysics, and radiation monitoring - protection in the space environment. We will present simulation results supporting the inclusion of DMAPS in such...
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Ingrid-Maria Gregor (DESY & Bonn University), Lennart Huth (Deutsches Elektronen-Synchrotron (DE))02/07/2026, 14:25WG1 - Monolithic Sensors
The next generation particle physics experiments requires scalable technologies at moderate prices and at highest possible integration levels to reduce system complexity. The Monstera project investigates fully integrated strips developed in LFoundry 150nm HV-VMOS, based on previous successful testing of passive strips. The design profits from the exiting readout and configuration scheme that...
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Hui Zhang (Institute of High Energy Physics)02/07/2026, 14:50WG1 - Monolithic Sensors
The drive for higher spatial resolution and larger tracking coverage in high-energy physics has led to silicon pixel detectors spanning several square meters, integrating tens of thousands of readout units. Conventional parallel powering, which supplies each module via separate cables, results in a proliferation of cabling that dramatically increases the material budget, exacerbates multiple...
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Jerome Baudot (IPHC - Strasbourg)02/07/2026, 15:15WG1 - Monolithic Sensors
SPARC (Sensor Pixel Asynchronous Readout CMOS) is a small MAPS prototype designed in a 65 nm CMOS technology to test and validate a new asynchronous logic to read pixel matrices. Based on a tree of asynchronous arbiters, this architecture is expected to cope easily with a wide range of hit rates and to deliver fired pixel information in time compatible with few tens ns time-stamping in a power...
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Michael Deveaux (GSI - Helmholtzzentrum fur Schwerionenforschung GmbH (DE))02/07/2026, 15:40WG1 - Monolithic Sensors
The MANTA project aims for building a versatile CMOS Monolithic Active Pixel Sensor suited for applications in various silicon trackers. It will provide simultaneously a ~10 µm spatial precision and a fast (1-10 ns) time stamping. This will be reached by complementing i) an asynchronous pixel readout providing the address of the fired pixel within few 10 ns time with ii) a fast pixel OR...
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Lennart Huth (Deutsches Elektronen-Synchrotron (DE))02/07/2026, 16:05WG1 - Monolithic Sensors
The OCTOPUS project develops a monolithic pixel sensor in the 65 nm TPSCo process, targeting the vertex-detector layers at a future Lepton Collider.. A single-point resolution of 3 μm, a time resolution in the order of 5 ns, a hit-rate capability of up to 100 MHz/cm², maximal thickness of 50 μm, an average power consumption below 50 mW/cm² are required. Additionally a minimal inactive...
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Dumitru-Vlad Berlea (Deutsches Elektronen-Synchrotron (DE))02/07/2026, 16:30WG1 - Monolithic Sensors
MALTA2 is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180 nm CMOS imaging process. It features a small collection electrode and achieves a full depletion of the sensitive volume at a low bias voltage of $-6\,\mathrm{V}$. Further development of the MALTA chip aims to satisfy the requirements of the outer layers of the ATLAS Inner Tracker. This requires...
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Zhijun Liang (Chinese Academy of Sciences (CN))02/07/2026, 16:55WG1 - Monolithic Sensors
We propose an R&D program focused on the SK hynix 90 nm CMOS Image Sensor (CIS) process as a dedicated technology option for Future lepton collider vertex-detector MAPS. The near-term goal is to establish and characterize a first generation of reticle-scale pixel-sensor prototypes in this process, including sensor test structures, small matrices, readout architectures, and radiation-tolerance...
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Yiming Li (Institute of High Energy Physics, Chinese Academy of Sciences (CN))02/07/2026, 17:20WG1 - Monolithic Sensors
High-Voltage CMOS sensors are promising technological candidates for trackers at future circular-electron collider as well as at the LHCb upgrade, due to the fast charge collection and intrinsic radiation hardness. Developed using 55nm CMOS processes, COFFEE seriers sensors aim to deliver a large prototype with high spatial and time resolution. COFFEE3 sensor was a first small prototype with a...
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Jairo Antonio Villegas Dominguez (Universidad de Sevilla (US) - Centro Nacional de Aceleradores)03/07/2026, 08:30
Ultra-thin 4H-SiC detectors have demonstrated their potential for real-time dosimetry in FLASH radiotherapy due to their radiation hardness, fast response, and capability to operate at zero bias. In this contribution, we investigate the charge transport and collection properties of partially depleted and non-biased ultra-thin \SI{3}{\micro\meter} 4H-SiC diodes under high ionization density...
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Sebastian Onder (Austrian Academy of Sciences (AT))03/07/2026, 08:50WG6 - Wide bandgap materials
This contribution reports on recent collaborative efforts to characterize 4H-SiC-based detectors using the TPA-TCT method during a three-week campaign at the ELI ERIC facility. The devices under test include large-area pad diodes, segmented strip detectors, and LGADs manufactured at Onsemi in the Czech Republic. The campaign focused on initial commissioning of the TPA-TCT setup using a 400 nm...
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Carmen Torres Munoz (Universidad de Sevilla (ES))03/07/2026, 09:10WG6 - Wide bandgap materials
This work investigates the neutron-induced degradation of carrier transport in 4H-SiC radiation detectors. Three planar p-in-n diodes developed at IMB-CNM,including a pristine device and two samples irradiated to neutron-equivalent fluences of $4 \times 10^{14} n_{eq}/cm^{2}$ and $1 \times 10^{15} n_{eq}/cm^{2}$, were evaluated under reverse bias voltage. Performance degradation under reverse...
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Cristian Quintana San Emeterio (Universidad de Cantabria and CSIC (ES))03/07/2026, 09:50WG6 - Wide bandgap materials
We present a method for extracting electron and hole trapping times in neutron-irradiated 4H-SiC radiation detectors from the Two-Photon Absorption Transient Current Technique (TPA-TCT) z-scan charge profiles. Three planar p-in-n diodes fabricated at IMB-CNM, comprising a pristine device and two irradiated to neutron-equivalent fluences of 4×10¹⁴ and 1×10¹⁵ n_eq cm⁻², were characterised at...
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Dr Peiyao Wang (Xidian University)03/07/2026, 10:10WG6 - Wide bandgap materials
As a wide-bandgap semiconductor offering advantages such as low dark current, fast response time, high carrier mobility, excellent radiation resistance, and biocompatibility, diamond has recently attracted significant attention in the field of ionizing radiation detection for UV, gamma-rays, X-rays, neutrons, protons, and heavy ions, as well as for detecting charged particles (e.g., electrons,...
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Huazhen Li (The University of Manchester (GB))03/07/2026, 10:30
Two-Photon Absorption (TPA) technique has become increasingly popular in recent years as a detector characterisation method because it provides a convenient way to test the response of semiconductor detectors at different positions and under various physical conditions. However, the TPA characterisation of detectors with complex non-transparent 3D electrode geometries is strongly affected by...
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Mauricio Rodriguez Ramos (Centro Nacional de Aceleradores (CNA). University of Seville.)WG6 - Wide bandgap materials
Advanced technologies such as nuclear fusion reactors, high-energy physics facilities, and space applications require radiation detectors capable of reliable operation under extreme conditions. In particular, the detection of 3.5 MeV alpha particles in future fusion devices like ITER demands high radiation hardness, thermal stability, and good spectrometric performance. 4H-SiC stands out due...
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Bojan Hiti (Jozef Stefan Institute (SI))WG2 - Hybrid silicon sensors
A new 3D detector concept developed and manufactured at IME uses ultra low diameter junction electrodes, which provide sufficiently high electric fields in their vicinity to generate internal gain. This opens possibilities of a radiation hard gain detector for timing and tracking purposes.
We have investigated a prototype with trench isolated 3D cells with dimensions of $35\times35\,\mu$m,...
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Marko Puklavec (Jozef Stefan Institute (SI))WG5 - Characterization techniques - facilities
Presentation of the technique for shot noise measurement using laser induced current.
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Sadullah Ozturk (Istanbul University-Cerrahpasa (TR))WG6 - Wide bandgap materials
The integration of organic semiconductors into radiation detector technologies has attracted increasing interest due to their compatibility with low-cost fabrication methods, suitability for large-area applications, and inherent mechanical flexibility. Within this framework, the P3HT:ZnO matrix structure offers significant potential by integrating enhanced charge-transport properties with...
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Suyu Xiao (Shandong Institute of Advanced Technology, China)WG6 - Wide bandgap materials
The hydrogen-boron fusion reaction is a promising candidate for future clean fusion energy. This work develops a silicon carbide (SiC) detector system for detecting alpha products from the hydrogen-boron reaction, focusing on response characteristics, energy resolution, and radiation hardness.
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A single-channel SiC detector (5 mm × 5 mm with guard ring) was fabricated. Tests with an alpha... -
Gregor Kramberger (Jozef Stefan Institute (SI))
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Chengxi Yang (University of California Berkeley (US))WG6 - Wide bandgap materials
SiC-LGAD sensors are promising candidates for tracking detectors at future colliders. However, accurate position and timing reconstruction can be challenging with analytical models when signal formation deviates from idealized assumptions. We present studies on SiC AC-LGAD using transformer-based machine learning models that process the full time-series waveform from the sensor readout. The...
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