Speakers
Description
In this presentation we report the first results from the feasibility study on the laser defect spectroscopy that has been conduced at the ELI ERIC using fs-laser. We are interested in spatial location of the defects (clusters) and in their type/character. The investigated methodology is based on the Transient Current Technique (TCT) using the unique wavelength-tunable femtosecond laser system available at ELI Beamlines. Irradiated silicon PIN diodes (1e16 neq/cm2) is illuminated with sub-band-gap laser pulses in the 1107–2500 nm range, while maintaining laser powers below the multiphoton absorption threshold (referenced to non-irradiated sensors) to ensure that the measured signals originate exclusively from radiation-induced defect states. Very tightly focused beam (< 3um in xy plane) was moved with micrometer precision across the sensor volume to identify location and density (clusters) of the defects. By recording transient current waveforms as a function of wavelength, the energy levels and signatures of different defect populations will be identified. 2D lateral scans of the signal amplitude, will be recorded at the PIN's different depths in order to investigate the cluster defect formation dependence on the depth of the investigated device
| Type of presentation (in-person/online) | In-person presentation |
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