Conveners
WG3 (WP3): Extreme fluence and radiation damage characterization
- Joern Schwandt (Hamburg University (DE))
- Ioana Pintilie (National Inst. of Materials Physics (RO))
WG3 (WP3): Extreme fluence and radiation damage characterization
- Ioana Pintilie (National Inst. of Materials Physics (RO))
- Joern Schwandt (Hamburg University (DE))
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Marie Christin Muehlnikel (CERN)29/06/2026, 09:15WG3 - Radiation Damage - Extreme Fluence
The HADES project (HArdness factor and DEfect studies in Silicon) aims to provide a comprehensive dataset on particle-dependent radiation damage in silicon detectors across a broad range of particles and energies, spanning from the keV to the multi-GeV regime, including neutron, electron, proton, and gamma radiation. By combining results obtained on irradiations performed at multiple...
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Faiza Rizwan (Cern)29/06/2026, 09:35WG3 - Radiation Damage - Extreme Fluence
Study of Si detectors for radiation tolerance at extreme fluences up to 1e18 neq/cm2 has been suffering from numerous challenges. Defects created in the crystal lattice, compensate the doping by trapping the free charge carriers, causing the depletion region to collapse, resisting the utilization of conventional electrical characterization tools. Infrared absorption measurements are still...
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Ioana Pintilie (National Inst. of Materials Physics (RO))29/06/2026, 09:55WG3 - Radiation Damage - Extreme Fluence
The Gain-Layer project started in the framework of the RD50/DRD3 collaborations and is now one of the WP3 projects in DRD3. It aims to conduct a comprehensive research on defect engineered p-type pad diodes that are mimicking the gain layer in LGADs, understand the acceptor removal process in irradiated p-type Silicon and parametrise it for various content of impurities and irradiation...
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Alessandro Fondacci (University of Perugia, INFN Perugia and CERN)29/06/2026, 10:15WG3 - Radiation Damage - Extreme Fluence
Doping removal is one of the key radiation-damage mechanisms affecting the performance of Low Gain Avalanche Diodes (LGADs). In standard p-type LGADs, the degradation of the gain implant motivated detailed studies of acceptor removal at high initial doping concentrations, of the order of $10^{16}$ $\text{cm}^{-3}$. More recently, the development of new LGAD architectures, such as resistive...
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Valentina Sola (Universita e INFN Torino (IT))29/06/2026, 10:35WG3 - Radiation Damage - Extreme Fluence
Updates on the ongoing activities of the Partial Activation of Boron (PAB) common project will be given. Preliminary results will be shown. The schedule of the PAB batches from CNM and FBK will be discussed.
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56. Partial Activation of Boron for Radiation-Hard LGADs: Production and electrical characterizationSyed Muhammad Abouzar Sarfraz (fondazione bruno kessler FBK)29/06/2026, 10:55WG3 - Radiation Damage - Extreme Fluence
Low Gain Avalanche Diodes (LGADs) have become the detector technology of choice for precision timing measurements in future high-energy physics experiments, where time resolutions of a few tens of picoseconds are required. However, their performance degrades significantly under irradiation due to acceptor removal in the gain layer, a radiation-induced process that progressively reduces the...
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Koji Nakamura (KEK High Energy Accelerator Research Organization (JP))29/06/2026, 11:45WG3 - Radiation Damage - Extreme Fluence
Low-Gain Avalanche Diodes (LGADs) are fast silicon sensors with internal charge multiplication and are key candidates for precision timing layers in future high-energy hadron colliders. Their operation in harsh radiation environments, however, is limited by acceptor removal in the gain layer, which reduces the active acceptor concentration and degrades the internal electric field required for...
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Prof. Gordana Lastovicka Medin (Faculty of Natural Sciences and Mathematics, University of Montenegro (ME)), Dr Rogelio Palomo Pinto (Dept. of Electronic, Engineering School of Engineering, University of Sevilla)29/06/2026, 12:05WG3 - Radiation Damage - Extreme Fluence
In this presentation we report the first results from the feasibility study on the laser defect spectroscopy that has been conduced at the ELI ERIC using fs-laser. We are interested in spatial location of the defects (clusters) and in their type/character. The investigated methodology is based on the Transient Current Technique (TCT) using the unique wavelength-tunable femtosecond laser...
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Dr Radu-Emanuel Mihai (Institute of Experimental and Applied Physics - Czech Technical University in Prague)29/06/2026, 12:25WG3 - Radiation Damage - Extreme Fluence
Our study investigates ionizing energy losses (IEL) in silicon following fast neutron impacts between 200 keV and 15 MeV. Using a silicon Timepix3 detector at the Los Alamos Neutron Science Center (LANSCE), a time-of-flight technique was employed to precisely correlate recorded ionizing events with specific neutron energies. The research addresses the competition between IEL and non-ionizing...
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Ioanna Kalfa (CERN)29/06/2026, 14:00WG3 - Radiation Damage - Extreme Fluence
To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High-Luminosity LHC (HL-LHC) phase with respect to the LHC, the CMS detector will replace the current calorimeter endcaps (CE) with the new High Granularity Calorimeter (HGCAL). It will facilitate the use of particle flow calorimetry with its unprecedented transverse and longitudinal readout...
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Iskra Velkovska (Jozef Stefan Institute (SI))29/06/2026, 14:20WG3 - Radiation Damage - Extreme Fluence
Low-Gain Avalanche Detectors (LGADs) will be employed in the ATLAS High Granularity Timing Detector (HGTD), which will provide precision timing information during the High-Luminosity LHC era. The sensors will operate in a harsh radiation environment where, in addition to neutrons, a significant fraction of the non-ionizing energy loss (NIEL) originates from charged hadrons. Understanding the...
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Ufuk Guney Tok (Cukurova University (TR))29/06/2026, 14:40WG3 - Radiation Damage - Extreme Fluence
The High-Luminosity LHC (HL-LHC) era will expose silicon detector systems to extreme radiation levels over many years of operation, making a thorough understanding of their long-term electrical behaviour essential. As part of the CMS detector upgrades, the endcap calorimeters will be replaced by the High Granularity Calorimeter (HGCAL), which relies on silicon pad sensors from 8-inch p-type...
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Javier Fernandez-Tejero (Institut de Microelectrònica de Barcelona (IMB-CNM, CSIC) (ES))29/06/2026, 15:00WG3 - Radiation Damage - Extreme Fluence
The innermost detector layers at the hadron-hadron Future Circular Collider (FCC-hh) are expected to experience extreme fluences up to 10$^{18}$ n$_{eq}$/cm$^2$, requiring a comprehensive study of radiation damage effects on silicon sensor technology beyond the High-Luminosity Large Hadron Collider (HL-LHC) regime. This work investigates the evolution of the polysilicon bias resistance and...
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Andrew Donald Gentry (University of New Mexico (US))29/06/2026, 15:20WG3 - Radiation Damage - Extreme Fluence
Bulk and surface defects in semiconductor devices are known to cause negative effects, including increased leakage current and increased charge trapping. Radiation from both high energy photons and particles (typically neutrons or protons) increases these negative effects, and will eventually render the device unusable. Previous studies have been performed demonstrating microwave annealing as...
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