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Alessandro Tricoli (Brookhaven National Laboratory (US)), Anna Macchiolo (University of Zurich (CH)), Martin Van Beuzekom (Nikhef National institute for subatomic physics (NL))30/06/2026, 08:30
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Mei Zhao (Chinese Academy of Sciences (CN))30/06/2026, 08:45WG2 - Hybrid silicon sensors
AC-coupled Low-Gain Avalanche Diode (AC-LGAD) detectors have emerged as promising candidates for next-generation particle tracking systems owing to their excellent timing resolution of approximately 50 ps and spatial resolution of about 10 ฮผm. For large-scale tracking detectors at future collider experiments, centimeter-scale strip AC-LGAD sensors are particularly important for reducing the...
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Roberta Arcidiacono (Universita e INFN Torino (IT))30/06/2026, 09:05WG2 - Hybrid silicon sensors
In this contribution, we report the results obtained by combining data from three test beams performed at DESY. DC-RSD matrices with three different pixel sizes (300, 500, and 1000 $\mu$m) were tested on the 5 GeV/c beam line. The spatial resolution shows a linear dependence on the pixel size, remaining consistently better than 5% of the pixel pitch, whereas the temporal resolution exhibits no...
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Yevhenii Padniuk (University of Zurich (CH))30/06/2026, 09:25WG2 - Hybrid silicon sensors
Trench-Isolated Low-Gain Avalanche Detectors (TI-LGADs) are a promising technology for future silicon timing detectors, combining excellent time resolution with fine segmentation and reduced inactive regions between pads. Within the AIDAinnova framework, a dedicated TI-LGAD production was carried out at FBK to investigate different wafer and design parameters aimed at optimizing the detector...
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Neil Moffat (Consejo Superior de Investigaciones Cientificas (CSIC) (ES))30/06/2026, 09:45WG2 - Hybrid silicon sensors
Low Gain Avalanche Detectors (LGADs) are silicon sensors fabricated with a tailored, enhanced electric field layer, which provides internal charge multiplication (gain) that amplifies the output signal and enables an excellent signal-to-noise ratio. Their stable and controlled moderate gain (up to 50), together with an exceptional timing resolution on the order of a few tens of picoseconds,...
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Tomas Ceponis (Vilnius University)30/06/2026, 10:05WG2 - Hybrid silicon sensors
Low Gain Avalanche Detectors (LGADs) are silicon sensors that combine moderate internal charge multiplication with excellent timing performance, reaching resolutions of a few tens of picoseconds. While conventional LGADs are typically based on p-type substrates and optimized for high-energy particle detection, n-type LGADs (nLGADs) have recently emerged as promising candidates for low-energy...
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JIA JIAN TEOH (ไธญๅฝ็งๅญฆ้ข้ซ่ฝ็ฉ็็ ็ฉถๆ(IHEP))30/06/2026, 10:55WG2 - Hybrid silicon sensors
AC-coupled Low-Gain Avalanche Detectors (AC-LGADs) are a promising 4D silicon detector technology for future high-energy physics collider experiments such as CEPC and FCC, offering excellent timing and spatial resolution. This contribution presents recent progress from our team in AC-LGAD sensor R&D, dedicated readout ASIC development (LATRIC), and the establishment of a comprehensive detector...
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Jairo Antonio Villegas Dominguez (Universidad de Sevilla (US) - Centro Nacional de Aceleradores)30/06/2026, 11:15WG2 - Hybrid silicon sensors
Low Gain Avalanche Detectors (LGADs) have emerged as key sensors for High Energy Physics and related applications due to their excellent time resolution and enhanced signal-to-noise ratio. However, their use in low-energy ion spectrometry has generally been limited by gain suppression effects, arising from the high ionization densities produced by such ions within the multiplication layer,...
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Luca Menzio (CERN)30/06/2026, 11:35WG2 - Hybrid silicon sensors
Over the last decade, Low-Gain Avalanche Diode sensors (LGADs) and Resistive Silicon Detectors (RSDs) have significantly advanced silicon detector capabilities. LGAD sensors provide much improved time resolution thanks to the fast and large signals with optimised signal-to-noise ratio, achieving resolutions of 30 ps or lower with 50 um-thick sensors. The addition of a resistive readout to...
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Valentina Sola (Universita e INFN Torino (IT))30/06/2026, 11:55WG2 - Hybrid silicon sensors
The results from an innovative batch of Low-Gain Avalanche Diodes (LGADs) produced by the Fondazione Bruno Kessler (FBK, Italy) will be presented.
The sensors are p-in-n LGADs, where the high-concentration implant that generates charge-carrier multiplication is provided by an n-type dopant (nLGAD). The nLGADs are produced on thin epitaxial n-type substrates, with an active thickness of 55...
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Marius Mรฆhlum Halvorsen (SINTEF)30/06/2026, 12:15WG2 - Hybrid silicon sensors
Low Gain Avalanche Diodes (LGADs) have evolved into a key technology in high-energy physics and several other fields. SINTEF initiated its LGAD development with a focus on devices tailored for the detection of shallowly interacting, low energy radiation such as soft X-rays and low-energy electrons. In this context, the internal gain is used to enhance small signals that would otherwise be...
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Maurizio Boscardin (Fondazione Bruno Kessler (IT))30/06/2026, 12:35WG2 - Hybrid silicon sensors
This contribution presents the results of the recently completed Si3D production run at FBK, developed in collaboration with INFN Cagliari and University of Trento. The production was mainly aimed at improving the timing performance and radiation hardness of next-generation 3D silicon pixel detectors.
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The sensors were designed with pixel pitches of 45 ฮผm and 55 ฮผm, including both... -
chuan liao (The High Energy Accelerator Research Organization)30/06/2026, 13:45WG2 - Hybrid silicon sensors
In this work, we investigate the timing performance and uniformity of double-sided p-type 3D silicon sensors produced by the Centro Nacional de Microelectrรณnica (CNM) on high-resistivity Czochralski silicon substrates. The studied devices consist of 5 ร 5 pixel matrices with hexagonal and square electrode geometries and inter-electrode spacings of 30 ฮผm and 50 ฮผm.
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The sensors were first... -
Manwen Liu (Chinese Academy of Sciences (CN))30/06/2026, 14:05
3D sensors have demonstrated outstanding performance, including radiation resistance, fast response, detection efficiency, power consumption, etc., especially after high radiation fluences. This is mainly due to the shorter drift distance of carriers. These characteristics make them the most attractive sensor technology for charged particle detection and trajectory reconstruction in...
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Evridki Chatzianagnostou (Nikhef National institute for subatomic physics (NL))30/06/2026, 14:25WG2 - Hybrid silicon sensors
A novel 3D silicon sensor produced by IMECAS, combining ultra-thin etched columns and trenches, is presented and studied for its timing performance. Several test structures with different electrode widths and pixel pitches were characterized through electrical measurements, laser, and SPS testbeam data.
The devices were first tested using IV and CV measurements. Their timing performance was...
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Prof. Gordana Lastovicka-Medin (Faculty of Natural Sciences and Mathematics, University of Montenegro)30/06/2026, 14:45WG2 - Hybrid silicon sensors
This contribution presents the results of a comprehensive and extensive experimental campaign conducted at the ELI-ERIC facility, focusing on the performance of irradiated and non-irradiated 3D silicon detectors. The investigated sensors include 3D Trench (35 x 35 x 30 um3) and 3D cylindrical single- and multi-pixel devices with column diameters of 10 and 20 um. These advanced structures were...
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Huimin Ji (the Institute of Microelectronics of Chinese Academy of Sciences)30/06/2026, 15:05
This study presents a novel planar-circular composite 3D trench silicon detector. The device has already been fabricated on a p-type epitaxial layer via an 8-inch CMOS-compatible process at IMECAS. Comprehensive characterizations based on TCAD simulations, electrical measurements, and the transient current technique (TCT) verify that the optimized composite structure achieves uniform electric...
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Dr Simone Michele Mazza (University of California,Santa Cruz (US))30/06/2026, 15:25WG2 - Hybrid silicon sensors
A report on the DJ-LGAD and adaptive gain layer RD50 project
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Milos Manojlovic (Consejo Superior de Investigaciones Cientificas (CSIC) (ES))01/07/2026, 08:30WG2 - Hybrid silicon sensors
In this contribution, we report on the use of Low Gain Avalanche Detectors (LGADs) as fast diagnostics in a high-intensity laser-driven protonโboron (pโB) fusion experiment conducted at the ELI-ERIC facility in the Czech Republic, organized under the PROBONO COST Action (CA21128).
p-type deep-multiplication-layer LGAD (dLGAD) and n-type LGAD (nLGAD) sensors from IMB-CNM production were...
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Esther Constanze Wais (Hamburg University (DE))01/07/2026, 08:50WG2 - Hybrid silicon sensors
MARTHA (Monolithic Array of Reach-Through Avalanche Diodes) is a novel LGAD concept developed for future high-granularity timing detectors requiring simultaneous precision timing and high spatial resolution, as envisioned for next-generation collider experiments such as FCC-ee. By introducing an additional low-doped n-layer between the n$^{+}$ contact and the gain layer, the electric field...
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Gaetano Barone (Brown University)01/07/2026, 09:10WG2 - Hybrid silicon sensors
Resistive Silicon Devices (RSDs), particularly AC-coupled Low Gain Avalanche Diodes (AC-LGADs), open the path for picosecond-level space and time (4D) tracking in high-energy physics (HEP) experiments such as those at the Large Hadron Collider (LHC), Electron-Ion Collider (EIC), and future (lepton) collider facilities. These sensors combine the fine spatial resolution of segmented detectors...
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Gaobo Xu (Institute of Microelectronics of Chinese Academy of Sciences)01/07/2026, 09:30
X-ray free-electron lasers (XFELs) feature ultra-high brightness, ultrashort pulses and ultra-high repetition rates, and serve as advanced large scientific facilities for exploring material structures and ultrafast dynamic processes of matter. The Shanghai High-Intensity Hard X-ray Free-Electron Laser Facility (SHINE), Chinaโs first hard X-ray free-electron laser facility currently under...
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jiahan Yu (Institute of Microelectronics, Chinese Academy of Sciences)01/07/2026, 09:50
Short-wave infrared (SWIR) photodetectors with high responsivity and low dark current are highly desired for applications in optical communication, infrared imaging, and integrated photonic systems. In this work, resonant-cavity-enhanced (RCE) Ge-on-insulator (GOI) PIN photodetectors incorporating distributed Bragg reflector (DBR) structures were designed, fabricated, and experimentally...
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Bojan Hiti (Jozef Stefan Institute (SI))WG2 - Hybrid silicon sensors
A new 3D detector concept developed and manufactured at IME uses ultra low diameter junction electrodes, which provide sufficiently high electric fields in their vicinity to generate internal gain. This opens possibilities of a radiation hard gain detector for timing and tracking purposes.
We have investigated a prototype with trench isolated 3D cells with dimensions of $35\times35\,\mu$m,...
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