5th DRD3 week on Solid State Detectors R&D

Session

WG6 (WP3)

2 Jul 2026, 09:00

Institute of Space Science & National Institute of Materials Physics

86. Introduction to WG6

Alexander Oh (The University of Manchester (GB)), Tao Han (University of Wisconsin), Xin Shi (Chinese Academy of Sciences (CN))

02/07/2026, 09:00

66. Developments of 4H-SiC sensors for Timepix4

Floris Patrick Jan Fassin (University of Groningen (NL))

02/07/2026, 09:05

WG6 - Wide bandgap materials

The wide bandgap 4H-SiC semiconductor material exhibits several intrinsic properties, including excellent radiation hardness, thermal stability, and high breakdown voltage, making it a promising candidate for deployment in high-radiation environments. Recent advances in its industrial-scale production have further enhanced its attractiveness for high-energy physics applications. This...

23. Time Resolution of a Novel Ultra-fast Graphene-Optimized 4H-SiC detector

Congcong Wang (Chinese Academy of Sciences (CN))

02/07/2026, 09:25

1

WG6 - Wide bandgap materials

Silicon carbide detectors exhibit good detection performance and have been studied for various detection applications. However, in some applications the presence of metal is undesirable, such as low-penetration particle detection, UV light detection and medical dosimetry. A graphene-optimized 4H-SiC detector has been fabricated not only meet the aforementioned detection requirements, but also...

33. Development of the SICAR 4H-SiC Radiation Detector

Xiyuan Zhang (Chinese Academy of Sciences (CN))

02/07/2026, 09:45

WG6 - Wide bandgap materials

This abstract reports on the design, fabrication, and characterization of the SICAR 3 4H SiC low gain avalanche detector (LGAD) implemented on a 350 nm SiC MOSFET process platform. Unlike previous SICAR 1 and SICAR 2 generations that relied on epitaxy defined structures, the SICAR 3 device employs an ion implantation based process to form the gain layer, junction termination extension (JTE),...

46. Characterization of 4H-SiC implanted LGADs after 23 MeV Proton Irradiation

Francesco Moscatelli (IOM-CNR and INFN, Perugia (IT))

02/07/2026, 10:05

WG6 - Wide bandgap materials

The demand for radiation-hard 4D detectors capable of simultaneous high-precision timing and spatial resolution is driving the investigation of 4H-Silicon Carbide (4H-SiC) as a robust alternative to silicon. While 4H-SiC offers superior thermal stability and radiation tolerance, its wide bandgap and current epitaxial thickness limits necessitate the use of internal charge multiplication. This...

12. Charge Collection and High-Density Ionization Effects in Ultra-Thin 4H-SiC Diodes for FLASH Radiotherapy Dosimetry

Jairo Antonio Villegas Dominguez (Universidad de Sevilla (US) - Centro Nacional de Aceleradores)

03/07/2026, 08:30

1

WG6 - Wide bandgap materials

Ultra-thin 4H-SiC detectors have demonstrated their potential for real-time dosimetry in FLASH radiotherapy due to their radiation hardness, fast response, and capability to operate at zero bias. In this contribution, we investigate the charge transport and collection properties of partially depleted and non-biased ultra-thin \SI{3}{\micro\meter} 4H-SiC diodes under high ionization density...

62. TPA-TCT Characterization of 4H-SiC PN diodes, LGADs and Strip Sensors

Sebastian Onder (Austrian Academy of Sciences (AT))

03/07/2026, 08:50

WG6 - Wide bandgap materials

This contribution reports on recent collaborative efforts to characterize 4H-SiC-based detectors using the TPA-TCT method during a three-week campaign at the ELI ERIC facility. The devices under test include large-area pad diodes, segmented strip detectors, and LGADs manufactured at Onsemi in the Czech Republic. The campaign focused on initial commissioning of the TPA-TCT setup using a 400 nm...

65. Evaluation of carrier transport in neutron-irradiated 4H-SiC detectros using alpha spectrometry and Angle Resolved-IBIC

Carmen Torres Munoz (Universidad de Sevilla (ES))

03/07/2026, 09:10

WG6 - Wide bandgap materials

This work investigates the neutron-induced degradation of carrier transport in 4H-SiC radiation detectors. Three planar p-in-n diodes developed at IMB-CNM,including a pristine device and two samples irradiated to neutron-equivalent fluences of $4 \times 10^{14} n_{eq}/cm^{2}$ and $1 \times 10^{15} n_{eq}/cm^{2}$, were evaluated under reverse bias voltage. Performance degradation under reverse...

84. Characterisation of 3D Diamond Detectors Utilising Two-Photon-Absorption Technique

Huazhen Li (The University of Manchester (GB))

03/07/2026, 09:50

Two-Photon Absorption (TPA) technique has become increasingly popular in recent years as a detector characterisation method because it provides a convenient way to test the response of semiconductor detectors at different positions and under various physical conditions. However, the TPA characterisation of detectors with complex non-transparent 3D electrode geometries is strongly affected by...

51. Simulation of Diamond Detectors Based on RASER

Peiyao Wang (Xidian University)

03/07/2026, 10:10

WG6 - Wide bandgap materials

As a wide-bandgap semiconductor offering advantages such as low dark current, fast response time, high carrier mobility, excellent radiation resistance, and biocompatibility, diamond has recently attracted significant attention in the field of ionizing radiation detection for UV, gamma-rays, X-rays, neutrons, protons, and heavy ions, as well as for detecting charged particles (e.g., electrons,...

57. Potential Using of Organic–Inorganic Hybrid Structures for Detection of Ionizing Radiations

Sadullah Ozturk (Istanbul University-Cerrahpasa (TR))

03/07/2026, 10:30

WG6 - Wide bandgap materials

The integration of organic semiconductors into radiation detector technologies has attracted increasing interest due to their compatibility with low-cost fabrication methods, suitability for large-area applications, and inherent mechanical flexibility. Within this framework, the P3HT:ZnO matrix structure offers significant potential by integrating enhanced charge-transport properties with...