Login

5th DRD3 week on Solid State Detectors R&D

29 June 2026 to 3 July 2026
Institute of Space Science & National Institute of Materials Physics
Europe/Bucharest timezone

Local Organizing Committee

Session

WG4

29 Jun 2026, 16:00
Institute of Space Science & National Institute of Materials Physics

Institute of Space Science & National Institute of Materials Physics

National Institute of Statistics

Conveners

WG4: Simulations

  • Marco Mandurrino (INFN)
  • Håkan Wennlöf (Nikhef National institute for subatomic physics (NL))

Presentation materials

There are no materials yet.

  1. 45. RASER Simulation of 4D Tracking Solutions
    Chenxi Fu (Chinese Academy of Sciences (CN))
    29/06/2026, 16:00
    WG4 - Simulations

    Next-generation particle-physics experiments require detectors capable of simultaneously measuring the hit time and position of incident ionizing particles with high precision, enabling four-dimensional tracking. Conventional LGADs are limited in pixel miniaturization, which motivates the development of alternative architectures such as AC-LGADs, 3D-LGADs, and deep-junction LGADs. RASER, a...

    Go to contribution page
  2. 3. A surface simulator for resistive silicon detectors
    Nicolo Cartiglia (INFN Torino (IT))
    29/06/2026, 16:20
    WG4 - Simulations

    This contribution presents a ROOT-based simulator forsignal sharing in Resistive Silicon Detectors (RSD). The program, controlled by a GUI, simulates signal sharing in a 4 ×4 pixel layout. The program allows to control several parameters such as the pixel size, the surface resistivity, the sensors thickness, the electrode shape, and the presence of trenches or resistors between electrode...

    Go to contribution page
  3. 58. A TCAD Simulation Framework for DLTS-based Defect Characterisation in Solid-State Particle Detectors
    Tommaso Croci (INFN, Perugia Unit)
    29/06/2026, 16:40
    WG4 - Simulations

    Defect spectroscopy techniques such as Deep-level Transient Spectroscopy (DLTS) are essential for characterising electrically active defects that affect the performance of semiconductor materials and sensors, particularly in harsh radiation environments. This work presents an update on a TCAD simulation framework developed to reproduce DLTS spectra.

    The framework has been applied to...

    Go to contribution page
  4. 14. TCAD simulations of AC-LGAD sensors: Impact ionization models and influence of temperature
    Dr Timo Hannu Tapani Peltola (Texas Tech University (US))
    29/06/2026, 17:00
    WG4 - Simulations

    Low Gain Avalanche Diodes (LGAD) are silicon sensors capable of achieving excellent timing resolution due to their characteristic internal avalanche mechanism for signal amplification. Capacitively-coupled LGAD sensor (AC-LGAD or Resistive AC-coupled Silicon Detector (RSD)) improves the granularity of the electrodes, and thus the spatial resolution, without decreasing the active area fraction....

    Go to contribution page
  5. 83. WG4 - Updates and Discussion
    Håkan Wennlöf (Nikhef National institute for subatomic physics (NL)), Marco Mandurrino (INFN)
    29/06/2026, 17:20
    WG4 - Simulations
Building timetable...