17–21 Sept 2012
Oxford University, UK
Europe/Zurich timezone

Characterization of FE-I4B pixel readout chip production run for ATLAS Insertable B-Layer upgrade.

18 Sept 2012, 09:50
25m
Martin Wood Lecture Theatre (Oxford University, UK)

Martin Wood Lecture Theatre

Oxford University, UK

<font face="Verdana" size="2"><b>Clarendon Laboratory</b> Parks Road OX1 3PU, Oxford, United Kingdom
Oral A1a

Speaker

Malte Backhaus (Universitaet Bonn (DE))

Description

A production run of FE-I4 pixel readout chips (denominated FE-I4B) was submitted September 2011 and first wafers were received in December. These chips are being used to build the Insertable B-Layer upgrade for ATLAS, to be installed during the 2013-14 shutdown. Results will be presented for detailed probing characterization of these wafers, as well as measurements of chips on boards before and after irradiation. Based on these test results, the FE-I4B has been accepted for IBL production and the power conditioning configuration, using on-chip voltage regulators, has been finalized.

Summary

Wafers have been probed at Bonn U., where detailed analog measurements have been made. Distributions of analog parameters will be shown and explained. also digital tests have been made including scan chains. The yield is high- around 65%, allowing up to 0.2% bad pixels, but there is significant variation from wafer to wafer. More detailed digital tests have been performed at a vendor using commercial equipment and these results will be compared. Chip on boards have been measured vs. temperature and radiation dose. Two alternate references were included in the design to control voltage regulators, but it turns out that neither one by itself has the ideal behaviour (stable with temperature and radiation and start-up safe always). However, the desired behaviour has been obtained by combining the references externally. A via mask change has been introduced for additional wafers being produced to fix a an ESD protection mistake important one pad. However, it has been decided that this is not a mandatory fix for IBL use, as the same level of protection can be provided by a using a specific wire bonding sequence.

Author

Dr TBD TBD (TBD)

Co-authors

David-Leon Pohl Malte Backhaus (Universitaet Bonn (DE)) Marlon Benoit Barbero (Universitaet Bonn (DE)) Mauricio Garcia-Sciveres (Lawrence Berkeley National Lab. (US))

Presentation materials