Speaker
Thomas Poehlsen
(Hamburg University)
Description
The transient current technique (TCT) is a well-known technique to analyse the electric field and the trapping behaviour of free charge carriers in silicon devices.
It turns out that neither the electric field nor the trapping can be predicted for irradiated diodes. Different assumptions on the drift of free charge carriers or on the trapping behaviour may be made in order to analyse TCT current signals. Different methods for the extraction of the free charge carrier life times are discussed in this talk.
A study is presented based on TCT measurements and on simulated TCT signals. Fluences between 1e14 and 4e15 neq / cm² were used. Results will be presented and discussed.
Author
Thomas Poehlsen
(Hamburg University)
Co-authors
Coralie Neubuser
(Hamburg University (DE))
Doris Eckstein
(DESY)
Erika Garutti
(Hamburg University (DE))
Evangelos Nagel
(Hamburg University (DE))
Dr
Georg Steinbrueck
(Hamburg University (DE))
Joachim Erfle
(Hamburg University (DE))
Joern Lange
(Hamburg University)
