Speaker
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute RAS)
Description
Temperature dependences of reverse current, I(T), of irradiated Si detectors are simulated and analyzed in the scope of carrier generation rate based on Shockley-Read-Hall statistics. Two models of bulk generation current have been developed for simulation of I(T) dependences: carrier generation via a single effective level in the bandgap, and carrier generation via midgap levels of radiation induced defects considered in PTI model of irradiated Si detectors – deep donors Ev + 0.48 eV and deep acceptors Ec – 0.53 eV. The results have shown that: a) both models give good fits of the experimental data; b) the activation energy Ea of the I(T) dependence for detectors irradiated by 23 GeV protons and 1 MeV neutrons is the same and equals 0.65 eV.
Author
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute RAS)
Co-authors
Mr
Igor Ilyashenko
(Ioffe Physical-Technical Institute RAS)
Dr
Jaakko Härkönen
(Helsinki Institute of Physics, CERN/PH)
Dr
Panja Luukka
(Helsinki Institute of Physics, CERN/PH)
Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute RAS)
Dr
Zheng Li
(Brookhaven National Laboratory)
