30 May 2012 to 1 June 2012
Bari
Europe/Zurich timezone

Investigation of Charge Multiplication in Silicon Strip Detectors

31 May 2012, 17:00
20m
Bari

Bari

Full Detector Systems Full Detector Systems

Speaker

Lokman Altan (KIT - Karlsruhe Institute of Technology (DE))

Description

Samples of n-in-p sensors provided by the RD50 collaboration have been irradiated with protons to fluences of 1e15, 5e15 and 1e16 neq/cm². An overview of the sensor properties before and after irradiation will be presented. After irradiation an annealing study of signal, signal to noise and leakage current has been performed with the ALiBaVa setup at different annealing steps up to 500 days at room temperature.

Primary author

Lokman Altan (KIT - Karlsruhe Institute of Technology (DE))

Co-authors

Alexander Dierlamm (KIT - Karlsruhe Institute of Technology (DE)) Thomas Mueller (Institut fuer Experimentelle Kernphysik) Wim De Boer (KIT - Karlsruhe Institute of Technology (DE))

Presentation materials