Conveners
Material and Defect Characterization
- Mara Bruzzi (INFN and University of Florence)
- Mara Bruzzi (Dipartimento di Fisica)
Prof.
Juozas Vaitkus
(Vilnius University)
30/05/2012, 09:15
Defect and Material Characterization
Two light beams excitation technique was used for investigation the recombination process in the by neutron irradiated Si (WODEAN samples, bar type). By application of additional illumination in the extrisic excitation region the photoconductivity spectrum and time dependent conductivity measurement reveals the levels that participate in the photoconductivity, but, if the sample is excited,...
Thomas Poehlsen
(Hamburg University)
30/05/2012, 09:35
Defect and Material Characterization
The transient current technique (TCT) is a well-known technique to analyse the electric field and the trapping behaviour of free charge carriers in silicon devices.
It turns out that neither the electric field nor the trapping can be predicted for irradiated diodes. Different assumptions on the drift of free charge carriers or on the trapping behaviour may be made in order to analyse TCT...
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute RAS)
30/05/2012, 10:25
Detector Characterization
Temperature dependences of reverse current, I(T), of irradiated Si detectors are simulated and analyzed in the scope of carrier generation rate based on Shockley-Read-Hall statistics. Two models of bulk generation current have been developed for simulation of I(T) dependences: carrier generation via a single effective level in the bandgap, and carrier generation via midgap levels of radiation...
Markus Gabrysch
(CERN)
30/05/2012, 10:45
Defect and Material Characterization
Preliminary results on the extraction of detrapping time constants for both electrons and holes obtained from red laser TCT measurements. Based on DLTS scans from 10-50°C the trapping levels and cross sections were obtained for highly p-irradiated silicon diodes.
Prof.
Mara Bruzzi
(Universita e INFN (IT)),
Mara Bruzzi
(Dipartimento di Fisica)
30/05/2012, 11:05
R. Mori, M. Bruzzi, Z. Li, M. Scaringella INFN and University of Florence, Italy BNL, Upton New York
n-type MCZ Si detectors have been irradiated with different particles and fluences: (a) fast neutron up to 1.5x10^14n/cm^2; (b) fast neutrons (1.5x10^14n/cm^2) and 60Co gammas (500MRad); (c) fast neutron (3x10^14n/cm^2) and 60Co gammas (500MRad), in view to test a possible radiation...
Prof.
Mara Bruzzi
(INFN and University of Florence),
Mara Bruzzi
(Dipartimento di Fisica)
30/05/2012, 11:20
