20th RD50 Workshop (Bari)

Session

New Structures

1 Jun 2012, 09:00

Bari

Conveners

New Structures

• Hartmut Sadrozinski (SCIPP, UC santa Cruz)
• Giulio Pellegrini (Universidad de Valencia (ES))

14. First results on cryogenic semiconductor detectors for advancing the LHC beam loss monitor

Dr Vladimir Eremin (Ioffe Physical-Technical Institute of Russian Academy of Sciences)

01/06/2012, 09:00

New structures and 3D sensors

One of the goals of LHC upgrade is the increase of the particle maximal energy. For that, the magnet coils of the collider should operate at higher current that requires advancing system for monitoring of the radiation environment in the vicinity of the coils. To fulfill the new requirements, the novel version of Beam Loss Monitor (BLMs) which should be radiation hard at cryogenic temperature...

45. Punch through protection and p-stop ion concentration in HPK strip mini-sensors

Jan Bohm (Academy of Sciences CR)

01/06/2012, 09:20

Protection of AC coupling capacitors from beam splashes has been studied on the HPK ATLAS07 mini-sensors with special structures, BZ4A,B,C and D, for p-stop ion concentrations 2e12, 4e12 and 1e13 ion/cm^2. Punch through voltage was measured by DC methods on both ends of strips and it was found that voltage dominantly depends on ion concentration for all punch through structures. Minimum PT...

44. Test beam results with a telescope system based on the Alibava system

Gianluigi Casse (University of Liverpool (GB))

01/06/2012, 09:40

New structures and 3D sensors

The Alibava based test beam telescope is a system with four 2D semiconductor detectors which measures track parameters with elevated precision and determines the position of the beam particle interactions with a device under test (DUT). Characteristics of detectors before and after irradiation, as a function of bias voltage or other variables (temperature, influence of magnetic field, etc.)...

18. Exploring charge multiplication for fast timing with silicon sensors

Hartmut Sadrozinski (SCIPP, UC santa Cruz)

01/06/2012, 10:00

New structures and 3D sensors

Charge multiplication in silicon sensors (discovered by RD50 institutions) might have applications beyond off-setting charge lost due to trapping during the drift of electrons or holes. Charge multiplication makes silicon sensors more like drift chambers or micro-channel plates, where a modest number of created charges are amplified (by factors of 10,000 or so) and can be used for fast...

26. Low Resistance Strip Sensors and Slim Edges Combined RD50 Experiment

Dr Miguel Ullan Comes (Universidad de Valencia (ES))

01/06/2012, 10:50

New structures and 3D sensors

An update will be presented on the Common RD50 Project "Low Resistance Strip Sensors". Three RD50 institutes are collaborating in this project (CNM-Barcelona, IFIC-Valencia, and SCIPP-Santa Cruz), in which a new method to enhance the sensor hardness to beam-loss damage is studied. The fabrication has been combined with new experiments related with another RD50 Common Project involving Slim...

47. New fabrication run of CMS 3d pixel detectors at CNM.

Giulio Pellegrini (Universidad de Valencia (ES))

01/06/2012, 11:10

I will show the first results on the manufacturing and electrical characterizations of the 3D CMS pixel sensors fabricated at CNM. This is a common project among IFCA, CNM and PSI.

46. Test beam measurements of CNM 3D pixel detectors

Giulio Pellegrini (Universidad de Valencia (ES))

01/06/2012, 11:25

I will show the last results on test beam measurements done in collaboration with IFAE on CNM 3D detectors.

31. Discussion on New Structures

Giulio Pellegrini (Universidad de Valencia (ES)), Hartmut Sadrozinski (SCIPP, UC santa Cruz)

01/06/2012, 11:40