Feb 11 – 15, 2013
Vienna University of Technology
Europe/Vienna timezone

Development of thin n-in-p pixel sensors with active edges and recent results of the ATLAS Planar Pixel R&D project

Feb 12, 2013, 2:00 PM
EI7 (Vienna University of Technology)


Vienna University of Technology


Anna Macchiolo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)


A summary of the recent results of the ATLAS Planar Pixel R&D project will be given, with a focus on thin n-in-p detectors, with an active thickness from 75 μm to 200 μm, from productions of the MPI Semiconductor Laboratory, VTT and FBK-CMM. The MPI-HLL thin n-in-p pixels were interconnected using the ATLAS FE-I3 and FE-I4 read-out chips, with standard solder bump-bonding and in case of the 75 μm detectors with Solid-Liquid-InterDiffusion (SLID), an interconnection technique developed by the Fraunhofer Institute EMFT in Munich. The results of the characterization before and after irradiation up to a fluence of 1016 neq cm-2 will be shown, using radioactive sources and beam tests. The VTT and FBK-CM pixel sensors make use of active trenches to reduce the inactive area at the edges of the devices. The reconstructed hit efficiency, obtained with VTT modules in beam tests will be discussed. An overview of the device simulations of pre- and post-irradiated FBK-CMM samples, together with the first electrical characterization of the produced devices will be given. Within the PPS Collaboration, alternative approaches to achieve active edges are also investigated, as the Scribe- Cleave-Passivate Approach, developed by the SCIPP group in collaboration with the U.S. Naval Research Laboratory (NRL). As a post processing step, this allows to achieve slim edges also for already produced sensors with a traditional design. Finally the performance of n-in-n pixel sensors up to a fluence of 2x1016 neq cm-2 will be shown, using sensors from productions at CiS employing designs by the TU Dortmund group.
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Primary author

Anna Macchiolo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)


A. Bagolin (Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM)) Alessandro La Rosa (Universite de Geneve (CH)) Gabriele Giacomini (Fondazione Bruno Kessler) Giovanni Calderini (Univ. P. et Marie Curie (Paris VI) (FR)) Giovanni Marchiori (LPNHE Paris) Hans-Gunther Moser (Werner-Heisenberg-Institut) Jacques Chauveau (Universites de Paris VI et VII) Laci Andricek (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D) Luciano Bosisio (Universita e INFN (IT)) Marco Bomben (Univ. P. et Marie Curie (Paris VI) (FR)) Maurizio Boscardin (FBK Trento) Nicola Zorzi (Fondazione Bruno Kessler - FBK) Philipp Weigell (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D) Rainer Richter (MPI for Physics) Dr Richard Nisius (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D) Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

Presentation materials