11-15 February 2013
Vienna University of Technology
Europe/Vienna timezone

New developments on Silicon photo-multipliers for visible and near-UV light at FBK

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Vienna University of Technology

Vienna University of Technology

Gußhausstraße 25-29, 1040 Wien (Vienna), Austria
Board: 98
Poster Electronics


Claudio Piemonte (FBK)


In this contribution, we will show selected results on the research and development FBK is carrying out on Silicon Photomultipliers for the detection of visible and near-ultraviolet light. We developed two complementary technologies having similar characteristics in terms of breakdown voltage (~30V), breakdown voltage temperature dependence (25mV/C) but different peak sensitivity wavelengths. The first, called RGB-SiPM, has a wide peak ranging from 450 to 600nm whereas the second, called NUV-SiPM, from 380 to 410nm. The maximum efficiency in both cases is higher than 30% for a 50x50um2 cell size with 42% fill factor. At maximum bias, primary dark noise is on the level of 500 and 150kHz/mm2, respectively. As a further technological step, we redesigned the dead border region around the SiPM cell to maximize the fill factor. We produced first RGB-SiPM prototypes with a 15x15um2 cell having a very high fill factor of 45% and a measured detection efficiency of about 30% at 550nm.
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