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Performance studies of Silicon Photomultipliers with bulk-integrated quench resistors

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Beurs van Berlage

Beurs van Berlage

Poster Sensors: 1d) Photon Detectors


Christian Jendrysik (Semiconductor Laboratory of the Max-Planck-Society)


In recent years Silicon Photomultipliers (SiPMs) profited from ongoing developments and improvements in technology, leading to devices having the potential to replace conventional photomultiplier tubes. The Geiger-mode operation of a SiPM requires a high-ohmic quench resistor, which is usually realized in conventional devices by a structured polysilicon layer on the surface, leading to a decrease of the maximum photon detection efficiency (PDE). In order to improve on this drawback, the Semiconductor Laboratory (HLL) of the Max-Planck-Society has developed a novel detector concept with the quench resistor integrated into a high-ohmic silicon bulk. This in turn results in a free and unstructured entrance window for photons on the surface of the device. In a first prototype production the proof of concept of this novel approach was confirmed and additional prototypes for devices improvements were developed. A brief general overview of our novel SiPM approach as well as its advantages and disadvantages will be discussed. In addition, the latest results of the characterization of SiMPl devices, including the PDE, optical cross talk and recovery time as well as an outlook for further improvements in the device performance will be presented.

Primary author

Christian Jendrysik (Semiconductor Laboratory of the Max-Planck-Society)


Florian Schopper (Semiconductor Laboratory of the Max-Planck-Society) Jelena Ninkovic (Semiconductor Laboratory of the Max-Planck-Society) Laci Andricek (Semiconductor Laboratory of the Max-Planck-Society) Raik Lehmann (Semiconductor Laboratory of the Max-Planck-Society) Rainer Richter (Semiconductor Laboratory of the Max-Planck-Society) Stefan Petrovics (Semiconductor Laboratory of the Max-Planck Society)

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