Speaker
Mr
Alfred Fox
(Research Center Juelich)
Description
High Power and high temperature electronics applications is one of the reasons for the enormous effort and progress which has been made in the development of III-nitride semiconductor material. A lot of investigations were done with regard to DC/RF dispersion since it influences the RF-performance of devices extremely. Significant performance improvement was achieved by application of a passivation layer on conventional AlGaN/GaN based HFETs. In a second step the introduction of a thin insulation layer underneath the gate to reduce the gate leakage current leads to the MISHFET or MOSHFET.
Author
Mr
Alfred Fox
(Research Center Juelich)
Co-author
Dr
Michel Marso
(Research Center Juelich)
