Speaker
Markus Gabrysch
(CERN)
Description
An update on the detrapping time constants for charge carriers in irradiated silicon sensors using the TCT method with long (microsecond) laser pulses is given.
Primary author
Markus Gabrysch
(CERN)
Co-authors
Hannes Neugebauer
(Hamburg University (DE))
Prof.
Mara Bruzzi
(Universita e INFN (IT))
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Michael Moll
(CERN)
Riccardo Mori
(University of Florence, INFN)
