21st RD50 Workshop (CERN)

Speaker List

• Victor Hugo Benitez Casma (Universidad de Valencia (ES))
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    Progress on the Low Resistance Strip Sensors and Slim Edges Combined RD50 Experiment

• Christopher Betancourt (Freiburg University)
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    A Charge Collection Study with Dedicated RD50 Charge Multiplication Sensors

• Ashutosh Bhardwaj (University of Delhi (IN))
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    Double Electric field Peak Simulation of Irradiated Detectors Using TCAD tools

• Jan Bohm (Inst.of Physics AS CR)
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    Punch through protection of heavily irradiated ATLAS07 mini-sensors.

• Marco Bomben (Univ. P. et Marie Curie (Paris VI) (FR))
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    Simulation of irradiated silicon p-bulk sensors

• Gianluigi Casse (University of Liverpool (GB))
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    Update on thin sensors results (will be shown on Friday afternoon in PPS meeting)

• Alexandre Chilingarov (Lancaster University, UK)
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    Electrical characterisation of heavily irradiated microstrip sensors

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    Temperature dependence of the bulk current in Si

• Bilge Demirkoz (Middle East Technical University (TR))
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    New proton irradiation facility in Ankara

• Robert Eber (IEKP - KIT)
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    Simulation of an effective 2-trap radiation damage model

• Robert Eber (KIT - Karlsruhe Institute of Technology (DE))
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    Investigation of Charge Multiplication in Silicon Strip Sensors

• Anna Elliott-Peisert (CERN)
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    CMS Preshower

• Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
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    Discussion on Detector Characterization and Simulations

• Joachim Erfle (Hamburg University (DE))
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    Irradiation study on diodes of different silicon materials for the CMS tracker upgrade

• Vitaliy Fadeyev (University of California,Santa Cruz (US))
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    Scribe-Cleave-Passivate (SCP) Slim Edge Technology for Silicon Sensors

• Marcos Fernandez Garcia (Universidad de Cantabria (ES))
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    First investigation of silicon microstrips for the CMS tracker upgrade using edge-TCT

• Marco Filipuzzi (Deutsches Elektronen-Synchrotron (DE))
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    Charge Trapping in the Simulation of ATLAS Semi-Conductor Tracker

• Richard French (The University of Sheffield)
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    The Birmingham Irradiation Facility

• Eckhart Fretwurst (II. Institut fuer Experimentalphysik)
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    Discussion on Detector Characterization and Simulations

• Markus Gabrysch (CERN)
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    Charge carrier detrapping in irradiated silicon sensors after microsecond laser pulses

• Eugenijus Gaubas (Vilnius University)
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    Evolution of pulsed current and of carrier lifetime characteristics in Si structures during 25 MeV neutrons irradiation using a spallator type source

• Stephen Gibson (CERN)
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    Observation of type-inversion in the innermost tracking layer of the ATLAS Pixel Detector

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    Workshop opening

• Jon Harrison (University of Manchester (GB))
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    Radiation damage effects in the LHCb Vertex Locator

• Erik Heijne (Czech Technical University (CZ))
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    Silicon: survival of the fittest

• Alexandra Junkes (Brown University)
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    Measurements on 800 MeV proton irradiated diodes (moved from Wednesday!)

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    Measurements on 800 MeV proton irradiated diodes (moved to Thursday morning!)

• Pawel Kaminski (Institute of Electronic Materials Technology)
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    Electronic properties of vacancy aggregates in n-type silicon for particle detectors

• Gregor Kramberger (Jozef Stefan Institute (SI))
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    Discussion on Full Detector Systems

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    Charge collection studies on heavily irradiated diodes from the RD50 multiplication run (an update)

• Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE))
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    Charge Collection measurements of n-in-p strip detectors after mixed irradiation to HL-LHC fluences and annealing

• Manuel Lozano Fantoba (Universidad de Valencia (ES))
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    A Portable Telescope Based on the Alibava System for Test Beam Studies

• Anna Macchiolo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
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    Characterization of active edge planar pixels produced at VTT

• Leonid Makarenko (Belarusian state University)
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    RADIATION DEFECT TRANSFORMATIONS UNDER ANNEALING OF P-TYPE SILICON

• Igor Mandic (Jozef Stefan Institute (SI))
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    TCT measurements with irradiated strip detectors

• Andrea Micelli (IFAE Barcelona)
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    Non uniform irradaition of CNM 3D sensors for AFP

• Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))
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    Annealing of Heavy Irradiated n-on-p Diodes at Temperatures 20°, 40°, 60° and 80°C

• Marko Milovanovic (Jozef Stefan Institute, Ljubljana)
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    Bias effects in highly irradiated n+-p silicon microstrip detectors after long term annealing

• Michael Moll (CERN)
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    Discussion Session: Materials and Defects

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    Workshop opening

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    Simulation of Double Junction using Synopsys TCAD

• Daniel Muenstermann (CERN)
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    First experience with radiation-hard active sensors in 180 nm HV CMOS technology

• Coralie Neubüser (Úniversity of Hamburg)
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    Impact of proton irradiations on the electrical properties of n-type Si-diodes

• Fco.Rogelio Palomo Pinto (University of Sevilla, School of Engineering)
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    MOS Capacitor Displacement Damage Dose (DDD) Dosimeter

• Giulio Pellegrini (Universidad de Valencia (ES))
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    RD50 - New structures discussion session

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    Status of the RD50 funding request for "detectors with enhanced multiplication"

• Roxana Radu (Institute for Experimental Physics, Hamburg University)
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    Radiation damage in n-type silicon after electron irradiation with energies between 1.5 MeV and 15 MeV

• Andre Lukas Schorlemmer (CERN / Georg-August-Universitaet Goettingen (DE))
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    Observation of type-inversion in the innermost tracking layer of the ATLAS Pixel Detector

• Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
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    Characterization of thin high irradiated n-in-p planar pixel sensor

• Miguel Ullan Comes (Universidad de Valencia (ES))
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    Multi-Project Wafer (MPW) Runs of Full Custom Pitch Adapters

• Yoshinobu Unno (High Energy Accelerator Research Organization (JP))
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    Study of the behaviours of silicon sensor structures, before and after irradiation

• Juozas Vaitkus (Vilnius University)
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    The free carrier transport properties in proton and neutron irradiated Si(Ge)

• Elena Verbitskaya (Ioffe Physical-Technical Institute of Russian Academy of Sciences)
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    Simulation of electric field profile in Si irradiated detectors with a consideration of carrier generation parameters

• Rui Wang (University of New Mexico (US))
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    ATLAS Pixel Detector radiation damage monitoring with the High Voltage delivery system

• Seth Zenz (Princeton University (US))
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    Radiation damage effects to the CMS Silicon Tracker