Christopher Betancourt (Freiburg University)
We investigate the charge collection efficiency of specially designed charge multiplication silicon strip detectors produced by MICRON in Liverpool under the framework of the CERN RD50 collaboration. Sensors are tested before and after proton and neutron irradiation to fluences of 1e15 and 5e15 neq/cm^2. Charge multiplication structures on these devices include varying diffusion times and energies for the implantation process, different sensor thicknesses, and several different strip width and pitch geometries. The charge collection for the charge multiplication devices is compared to standard silicon strip sensors with no charge multiplication properties. Bulk and interstrip capacitance-voltage and current voltage measurements are also carried out.