Nov 14 – 16, 2012
Europe/Zurich timezone

Impact of proton irradiations on the electrical properties of n-type Si-diodes

Nov 15, 2012, 9:15 AM


6-2-024 on 14th & 15th Nov. 222-R-001 on 16th Nov.
Detector Characterization Detector Characterization and Simulations


Ms Coralie Neubüser (Úniversity of Hamburg)


Silicon n-type diodes made of FZ and MCz material were manufactured for the CMS HPK campaign and irradiated with 23 MeV and 23GeV protons. At a fluence of 3e14/cm² neq the MCz n-type diodes demonstrate clear type inversion after 23MeV proton irradiation. This does not appear after the irradiation with 23 GeV protons. An influence of process induced bulk defects could be excluded. In order to get a deeper understanding of the differences of the radiation induced defects, the Thermally Stimulated Current Technique (TSC) was used. The sensors were electrically characterized by means of capacitance-voltage (C-V) and current-voltage (I-V) measurements. Transient current technique pulses (TCT) and charge collection efficiency (CCE) measurements have indicated a dependence of the bulk damage on the proton energy. Moreover a dependence on the oxygen concentration of the sensors could be observed.

Primary author

Ms Coralie Neubüser (Úniversity of Hamburg)


Alexandra Junkes (Brown University) Doris Eckstein (DESY) Eckhart Fretwurst (II. Institut fuer Experimentalphysik) Erika Garutti (DESY) Dr Georg Steinbrueck (Hamburg University (DE)) Joachim Erfle (Hamburg University (DE)) Thomas Poehlsen (University of Hamburg)

Presentation materials