Nov 14 – 16, 2012
Europe/Zurich timezone

Electronic properties of vacancy aggregates in n-type silicon for particle detectors

Nov 14, 2012, 2:00 PM


6-2-024 on 14th & 15th Nov. 222-R-001 on 16th Nov.
Microscopic Defects and Material Characterization Defect and Material Characterization


Prof. Pawel Kaminski (Institute of Electronic Materials Technology)


Vacancy aggregates, formed in silicon exposed to high fluences of hadrons or ions, seem to be the main defects limiting radiation hardness of tracking detectors. Recently, the electronic properties of these defects have been intensively studied using theoretical calculations. However, apart from the case of divacancies, very few experimental results concerning the properties higher order vacancy complexes have been obtained. In this paper, we report the new results obtained by the high-resolution photoinduced transient spectroscopy (HRPITS) indicating the presence of trivacancies (V3) both in neutron-irradiated n-type MCz Si and proton irradiated epitaxial silicon. Based on the Laplace spectral fringes, the activation energies for electron emission from deep acceptors V3(2-/-) and V3(-/0), equal to 0.36 and 0.46 eV, respectively, were determined. The activation energies for electron emission from tetravacancy related deep acceptors V4(2-/-) and V4(-/0), are likely to be 0.39 and 0.55 eV, respectively.

Primary author

Prof. Pawel Kaminski (Institute of Electronic Materials Technology)


Dr Roman Kozlowski (Institute of Electronic Materials Technology) Mr Zelazko Jaroslaw (Institute of Electronic Materials Technology)

Presentation materials