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Nov 14 – 16, 2012
CERN
Europe/Zurich timezone

Simulation of irradiated silicon p-bulk sensors

Nov 15, 2012, 12:10 PM
20m
CERN

CERN

6-2-024 on 14th & 15th Nov. 222-R-001 on 16th Nov.
RD50/PPS session (Friday morning) Detector Characterization and Simulations

Speaker

Marco Bomben (Univ. P. et Marie Curie (Paris VI) (FR))

Description

TCAD simulations of irradiated silicon p-bulk sensors have been carried out and the results have been compared to CERN 24 GeV-p irradiated n-in-p diodes. The simulations' results are in good agreement with measured data and allow for realiable predictions on future detectors.

Primary author

Marco Bomben (Univ. P. et Marie Curie (Paris VI) (FR))

Co-author

Giovanni Marchiori (Univ. P. et Marie Curie (Paris VI) (FR))

Presentation materials