Speaker
Marco Bomben
(Univ. P. et Marie Curie (Paris VI) (FR))
Description
TCAD simulations of irradiated silicon p-bulk sensors have been carried out and the results have been compared to CERN 24 GeV-p irradiated n-in-p diodes.
The simulations' results are in good agreement with measured data and allow for realiable predictions on future detectors.
Primary author
Marco Bomben
(Univ. P. et Marie Curie (Paris VI) (FR))
Co-author
Giovanni Marchiori
(Univ. P. et Marie Curie (Paris VI) (FR))
