Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE))
Planar n-in-p strip sensors produced by Hamamatsu Photonics were irradiated in consecutive irradiation steps with pions of 280 Mev/c, protons of 25 MeV/c and reactor neutrons resulting in a combined fluence of up to 2.8x1015 neq/cm2. The 320 mum thick devices with p-stop interstrip isolation structures are investigated using electrons from a Sr90 source based on the ALIBAVA readout system. After each irradiation step both charge collection and noise measurements have been conducted. After irradiation to the highest dose consecutive annealing steps were at 60°C performed and again measurements with the beta source setup carried out.
Christopher Betancourt (Freiburg University) Dean Charles Forshaw (University of Liverpool-Unknown-Unknown) Gianluigi Casse (University of Liverpool (GB)) Karl Jakobs (Albert-Ludwigs-Universitaet Freiburg (DE)) Paul Dervan (University of Liverpool (GB)) Torkjell Huse (University of Liverpool (GB)) Ulrich Parzefall (Albert-Ludwigs-Universitaet Freiburg (DE))