Nov 14 – 16, 2012
Europe/Zurich timezone

Charge collection studies on heavily irradiated diodes from the RD50 multiplication run (an update)

Nov 15, 2012, 10:20 AM


6-2-024 on 14th & 15th Nov. 222-R-001 on 16th Nov.
Detector Characterization Detector Characterization and Simulations


Gregor Kramberger (Jozef Stefan Institute (SI))


Special diodes were designed on RD50 multiplication mask which combine the ease of use of a pad-detector with electric field of a strip detector. A series of charge collection measurements was performed with diodes of different implant properties and thicknesses. The diodes were irradiated with neutrons to the total accumulated fluence of 8e16 cm-2. Charge collection efficiency for 90Sr was measured at each fluence and for selected detectors also during long term annealing. The values were compared between the wafers with different properties as well as with standard pad detectors.

Primary author

Gregor Kramberger (Jozef Stefan Institute (SI))


Igor Mandic (Jozef Stefan Institute (SI)) Marko Mikuz (Jozef Stefan Institute (SI)) Marko Milovanovic (Jozef Stefan Institute, Ljubljana) Dr Marko Zavrtanik (Jozef Stefan Institute (SI)) Vladimir Cindro (Jozef Stefan Institute (SI))

Presentation materials