Nov 14 – 16, 2012
Europe/Zurich timezone

Characterization of thin high irradiated n-in-p planar pixel sensor

Nov 16, 2012, 10:00 AM


6-2-024 on 14th & 15th Nov. 222-R-001 on 16th Nov.
Radiation Damage in LHC Detectors (Wednesday morning) Irradiation Facilities, 3D and Pixel Detectors (joined with ATLAS PPS)


Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)


Silicon pixel modules employing n-in-p planar sensors with an active thickness ranging from 75µm to 285µm were assembled with both FE-I3 and FE-I4 ATLAS chips. The thinned sensors are designed to avoid the signal degradation and ensure the radiation hardness even after high fluences, moreover the n-in-p technology requires a single side processing and is a cost-effective alternative to n-in-n sensors for larger radii of the silicon pixel tracker. In this talk we present and compare results of the characterization of these pixel modules after high irradiation up to a fluence of 1e16 n_eq cm^-2. High precision beam test measurements have been performed with high energy pions at the SpS CERN and compared to results from laboratory obtained using a radioactive Sr90 source. Cluster proprieties, charge collection and tracking efficiency of the devices have been investigated.

Primary author

Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

Presentation materials