14–16 Nov 2012
CERN
Europe/Zurich timezone

MOS Capacitor Displacement Damage Dose (DDD) Dosimeter

14 Nov 2012, 16:50
20m
CERN

CERN

6-2-024 on 14th & 15th Nov. 222-R-001 on 16th Nov.
Microscopic Defects and Material Characterization Defect and Material Characterization

Speaker

Dr Fco.Rogelio Palomo Pinto (University of Sevilla, School of Engineering)

Description

On the characterization by experiments and simulation of the possibilities of nanometric MOS capacitors for DDD dosimetry.

Primary author

Dr Fco.Rogelio Palomo Pinto (University of Sevilla, School of Engineering)

Co-authors

Mr Pablo Fernández-Martínez (Centro Nacional de Microelectrónica Barcelona CSIC) Dr Salvador Hidalgo Villena (Centro Nacional de Microelectrónica Barcelona CSIC)

Presentation materials