Speaker
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Description
Edge-TCT is a transient current technique in microstrip detectors where charge carriers are injected from the side of the detector, instead of from the top or bottom. Current transients are measured as a function of depth, therefore charge collection efficiency and instant drift velocity can be profiled. Studying the collection time of the carriers as a function of depth we can extract information on the electric field and the capacitance of the detector. This information is then used as starting values for the fit of measured drift velocity, and the electric field finally computed. We present results of this method on non-irradiated Micron detectors (n-bulk, p-bulk) and MCZ n-type detectors produced by HIP.
Author
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Co-authors
Christian Gallrapp
(CERN)
Hannes Neugebauer
(Hamburg University (DE))
Markus Gabrysch
(CERN)
Michael Moll
(CERN)
