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Recent Results of the 3D-Stripixel Si Detectors
Zheng Li1, D. Bassignana2, Wei Chen1, Shuhuan liu1,3, David Lynn1, G. Pellegrini2
1 Brookhaven National Laboratory, Upton, NY 11973, USA
2 Centro Nacional de Microelectrónica (IMB-CNM-CSIC), Campus Univ. Autónoma de Barcelona, 08193 Bellaterra, Barcelona (Spain)
3 Permanent address: Xian Jiaotong University, Xian, China
First prototype of the new 3D-Stripixel Detectors has been fabricated by CNM of Spain. TCT test results using lasers of various wavelengths (660 to 1.06um) have shown good 2D-position sensitivity with one-sided processing. CCE test by ALIBAVA using the laser with um-beam size have shown sub-pixel (80 um)2D position resolution. Recent BNL ALIBAVA tests using a 1.06 um laser with mm-beam size have shown clear 2D-position sensitivity as well. The 2D-position sensitivity has been measured as a function of detector bias voltages and laser intensity.