Speaker
Mrs
Maria Golovleva
(Lappeenranta Univ. of Technology)
Description
A simulation of a simple pad silicon detector and strip detector containing two defects: deep donor (Ev+0.48 eV) and deep acceptor (Ec-0.595 eV) was performed using Silvaco TCAD software package. The sensor modeling parameters were taken from the RD50 Detector Simulation Group task. The electric field distributions at different reverse bi-ases, fluences and detector operational temperatures are simulated. The predicted beha-vior of detector after irradiation has been achieved. The results of the simulation are compared with modelled data provided by V.Eremin.
Author
Mrs
Maria Golovleva
(Lappeenranta Univ. of Technology)
Co-author
Prof.
Tuure Tuuva
(Lappeenranta Univ. of Technology)
