3–5 Jun 2013
University of New Mexico
US/Mountain timezone

Investigation of charge multiplication in silicon strip detectors

4 Jun 2013, 14:00
20m
Student Union Building (University of New Mexico)

Student Union Building

University of New Mexico

Albuquerque, New Mexico, USA

Speaker

Robert Eber (KIT - Karlsruhe Institute of Technology (DE))

Description

N-in-p Micron sensors provided by the RD50 collaboration have been irradiated with protons or neutrons up to a fluence of 5e16neq/cm2. After irradiation, an annealing study of signal, signal to noise and leakage current has been performed with the ALiBaVa setup at different annealing steps up to 500 days at room temperature. A sample irradiated with neutrons to 5e15neq/cm2 and narrow strip width showed a higher charge collection than comparable sensors with other geometries or irradiation particle type. To investigate the influence of the dependence of collected charge on the oxide charge induced by irradiation, samples with neutron irradiation have been exposed additionally to gamma irradiation. The results will be presented.

Author

Co-authors

Alexander Dierlamm (KIT - Karlsruhe Institute of Technology (DE)) Robert Eber (KIT - Karlsruhe Institute of Technology (DE)) Wim De Boer (KIT - Karlsruhe Institute of Technology (DE))

Presentation materials