Speaker
Roxana Radu
(University of Hamburg)
Description
The work focuses on the study of radiation damage in n-type silicon diodes induced by electrons of different kinetic energies, from 1.5 MeV to 15 MeV, in order to study the differences between point and cluster-related defects. For the characterization of the radiation induced defects the Thermally Stimulated Current (TSC) and Deep Level Transient Spectroscopy (DLTS) methods were used. The introduction rates of vacancy-related point defects and of defects in so-called disordered regions as function of electron energy are shown. While the irradiation with 1.5 MeV electrons leads to creation of only point defects the formation of cluster defects starts already at 3.5 MeV. The obtained results will be presented and discussed.
Author
Roxana Radu
(University of Hamburg)
Co-authors
Dr
Eckhart Fretwurst
(Institute for Experimental Physics, University of Hamburg, Hamburg, Germany)
Dr
Gunnar Lindström
(Institute for Experimental Physics, University of Hamburg, Hamburg, Germany)
Dr
Ioana Pintilie
(National Institute of Materials Physics NIMP, Bucharest, Romania)
Dr
Robert Klanner
(Institute for Experimental Physics, University of Hamburg, Hamburg, Germany)
