Speaker
Dr
Kurt Aulenbacher
(Institut für Kernphysik, Johannes Gutenberg-Universität Mainz)
Description
Spin-polarized beams of high brightness may be produced by photoemission from semiconductor superlatices, e.g. GaAs/GaAsP. A negative electron affinity (NEA) state of the semiconductor has to be provided to make photoemission energetically possible. This is achieved by a modification of the cathode surface, in particular by a sub-monolayer of Cs:0 compounds. The challenge for an accelerator application is to maintain the NEA state under running conditions. The implications for design and operation of the spin-polarized source are discussed.
Primary author
Dr
Kurt Aulenbacher
(Institut für Kernphysik, Johannes Gutenberg-Universität Mainz)
