Feb 20 – 22, 2013
CERN
Europe/Zurich timezone

TIME-of-FLIGHT TECHNIQUE for RILIS SELECTIVITY IMPROVEMENT

Feb 22, 2013, 10:00 AM
20m
160/1-009 (CERN)

160/1-009

CERN

17
Show room on map

Speaker

Dr Viacheslav Mishin (Institute for Spectroscopy RAS)

Description

In a resonance ionization laser ion source (RILIS) lasers produce ions in a time equal to the laser pulse width about 10 ns. In principal, the width of extracted from the RILIS cavity ion bunches can be the same order as the laser pulse width. Then, the RILIS selectivity could be significantly increased with a gating technique as many as the ratio of the laser pulse-repetition interval to the laser pulse width. It is reasonable to expect that the RILIS selectivity may be as much as 104 with high repetition rate lasers (104 pps). This report discusses the possibility of the creation a single- or dual-stage time-of-flight system makes possible the compression of ion pulses in the region between the target and the extraction electrode. In addition, the preliminary results will be presented for testing of a hot graphite cavity, in which laser ionization occur, operating at the voltage about 40 V. At these extraction voltage small width ion bunches can be created and yet the mass-separator resolution will not reduced by the ions kinetic energy distribution.

Primary author

Dr Viacheslav Mishin (Institute for Spectroscopy RAS)

Presentation materials