PTP and the inter-strip capacitance and resistance for irradiated ATLAS07 mini-sensors.

18 Feb 2013, 16:00
20m
"Stringa" Conference Hall (FBK, Trento)

"Stringa" Conference Hall

FBK, Trento

Via Sommarive, 18 38123 Povo - Trento ITALY

Speaker

Dr Jan Bohm (Institute of Physics ASCR Prague)

Description

PTP against beam splashes together with the inter-strip capacitance and resistance have been measured on the heavily irradiated (4e14, 2e15 and 1e16neq/cm^2) and non-irradiated samples of n-on-p HPK ATLAS07 mini-sensors. Each sample consists of four mini-sensors with special PTP structures A, B, C and D and with three different ion concentrations of p-stop and p-stop with p-spray n-strip isolation: 2e12, 4e12 and 1e13 ion/cm^2. There were found no onsets of micro-discharges below of -600 V of reverse bias. Punch through voltage is increasing with growing fluency and reaches its valuable maximum at fluency 2e15 neq/cm^2 for sample of 1e13 ion/cm^2. PTV is smallest at 1e16neq/cm^2 from all tested fluencies including zero one. Inter-strip capacitance does not depend on fluency up to 1e16 neq/cm^2 and on the p-stop ion concentration. Inter-strip resistance is decreasing with fluency. Study is continuing.

Primary author

Dr Jan Bohm (Institute of Physics ASCR Prague)

Co-authors

Jan Scheirich (Charles University) Dr Michael Solar (Czech Technical University) Dr Peter Kodys (Charles University) Petr Masek (Czech Technical University) Prof. Zdenek Dolezal (Charles University Prague)

Presentation materials