Prof. Philip Patrick Allport (University of Liverpool (GB))
A series of upgrades leading to those required for the HL-LHC phase of ATLAS is described with emphasis on those relating to the tracking part of the experiment. Aspects of the proposed ATLAS HL-LHC tracker layout and recent results on prototyping performance are presented. The wider context of ATLAS Upgrade planning is also briefly discussed along with current understanding of scheduling....
Harris Kagan (Ohio State University (US))
With the first three years of the LHC running well underway, ATLAS and CMS are planning to upgrade their innermost tracking layers with more radiation hard technologies. Chemical Vapor Deposition (CVD) diamond is one such technology. CVD diamond has been used extensively in beam condition monitors as the innermost detectors in the highest radiation areas of BaBar, Belle, CDF and all LHC...
Tomasz Szumlak (AGH University of Science and Technology (PL))
LHCb is a dedicated experiment to study New Physics in the decays of heavy hadrons at the Large Hadron Collider (LHC). Heavy hadrons are identified through their flight distance in the VELO, the retractable silicon-strip vertex detector surrounding the LHCb interaction point at only 7 mm from the beam during normal LHC operation. Both VELO halves comprise 21 silicon micro-strip modules each....
Alessandro La Rosa (Universite de Geneve (CH))
The ATLAS experiment will upgrade its Pixel Detector with the installation of a new pixel layer in 2013-14. The new sub-detector, named Insertable B-layer (IBL), will be installed between the existing Pixel Detector and a new smaller radius beam-pipe at a radius of 3.3 cm. To cope with the high radiation and pixel occupancy due to the proximity to the interaction point, a new read-out chip...
Andrea Gaudiello (INFN and University of Genova)
The first upgrade of the ATLAS Pixel Detector will consist in the installation of a new pixel layer during the shutdown of the LHC machine in 2013. The new detector, called Insertable B-Layer (IBL), will be inserted between the existing Pixel Detector and a new (smaller radius) beam-pipe, at an average sensor radius of 3.4 cm. The IBL requires the development of several new technologies to...
Sebastian Grinstein (IFAE/ICREA - Barcelona)
Due to the successful performance of the IBL 3D sensors, the technology was selected for the ATLAS Forward Physics (AFP) project. The AFP presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first CNM AFP prototypes and beam test studies of 3D...
Jens Weingarten (Georg-August-Universitaet Goettingen (DE))
To extend the physics reach of the LHC, upgrades to the accelerator are planned which will increase the peak luminosity by a factor 5 to 10. To cope with the increased occupancy and radiation damage of the inner trackers, the ATLAS experiment plans to introduce an all-silicon inner tracker with the HL-LHC upgrade. To investigate the suitability of pixel sensors using the proven planar...
2. Characterization of thin n-in-p planar pixel sensors with active edges before and after irradiation
Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
We report about the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150µm, produced at MPI/HLL, and 100µm with active edges, produced at VTT in Finland. The thinned sensors are designed to reduce the signal degradation and ensure radiation hardness even after high fluences. Moreover the n-in-p technology only requires a single side...
Gianluigi Casse (University of Liverpool (GB))
The effect of thickness on the CCE performances after irradiation is here investigated with measurements taken with a 50µm thick microstrip detectors irradiated at about 2.2 Neq cm-2.
Dr Jan Bohm (Institute of Physics ASCR Prague)
PTP against beam splashes together with the inter-strip capacitance and resistance have been measured on the heavily irradiated (4e14, 2e15 and 1e16neq/cm^2) and non-irradiated samples of n-on-p HPK ATLAS07 mini-sensors. Each sample consists of four mini-sensors with special PTP structures A, B, C and D and with three different ion concentrations of p-stop and p-stop with p-spray n-strip...
Yoshinobu Unno (High Energy Accelerator Research Organization (JP))
Radiation-tolerant n-in-p silicon sensors were developed for use in very high radiation environments. Novel n-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n-implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP)...
13. Fabrication of new p-type pixel detectors with enhanced multiplication effect in the n-type electrodes.
Marta Baselga Bacardit (Universidad de Valencia (ES))
In the framework of the RD50 collaboration New p-type pixel detectors with small gain will soon be fabricated in the clean room at the CNM. Our new design will allow for thinner structures with moderate multiplication factors and ultra short collection times. The mask of the new structures will be presented and the results of some electrical simulations on these new devices will be discussed.
Gregor Kramberger (Jozef Stefan Institute (SI))
Silicon diodes with special design of the implant - so called ``spaghetti diodes'' - were used to study the impact of implantation process on charge multiplication after irradiations to very large equivalent fluences of 8e16 cm-2. The samples were found to work even at this unprecedented levels of irradiation. Different implantation processes were implemented on samples for studying the impact...
Hartmut Sadrozinski (SCIPP, UC santa Cruz)
Ultra-fast silicon sensors will combine short collection time with internal gain. I will present motivation, principle of operation, implementation and first results for ultra-fast silicon sensors.
Dr Maurizio Boscardin (FBK)
We report on the results from the production of the 3D silicon pixel sensors for the ATLAS IBL. We present the fabrication process and some selected results from the electrical characterization of detectors and test structures. The main technological aspects related to the production yield optimization will also be addressed.
Andrea Micelli (IFAE Barcelona)
The results of the CNM 3D sensor development and productions, including sensors for the ATLAS IBL detector, will be briefly reviewed. Testbeam results of irradiated and non-irradaited sensors and recent burn-in tests of 3D prototypes will be presented.
12. Investigation of the electrical characteristics of double-sided silicon 3D sensors after irradiation with different particles
Mr Roberto Mendicino (University of Trento, INFN Padova (gruppo collegato di Trento))
We have previously reported on the impact of layout on the electrical characteristics of double-sided silicon 3D sensors fabricated at FBK. In the past year, our study has been continued to account for radiation damage effects. To this purpose, different irradiation campaigns have been conducted in collaboration with some external groups. Several sets of 3D diodes with different layout and...
Martin Hoeferkamp (University of New Mexico (US))
In collaboration with the University of Trento we have measured the charge collection response of three different FBK 3D sensor designs. The sensors have been irradiated with 800 MeV protons to various fluences exceeding 1x10^16 neq/cm^2, and the relative CCE has been characterised with source and laser stimulus.
Christopher Betancourt (Albert-Ludwigs-Universitaet Freiburg (DE))
We report on the characterization of newly developed Double-sided Double Type Column (DDTC) 3D detectors produced by FBK in Trento. Pre-irradiation measurements on these sensors include charge collection measurements using a Beta source to test the sensors performance in terms of absolute charge deposited, as well as laser can measurements in order to investigate the spatial uniformity of the...
Prof. Ada Solano (Universita di Torino e INFN (IT))
The pixel detector at the heart of the CMS experiment at the CERN LHC will be exposed to unprecedented radiation fluences, i.e. 1x1016 neq/cm2, at the high-luminosity LHC upgrade in 2020. Standard planar technology was shown to be unable to meet the CMS physics requirements at this high fluence regime. Ultra radiation-hard 3D technology is one of the most promising candidates for replacement...
Mr Iain Haughton (The University of Manchester)
I shall present on the fabrication and characterization of the first prototype 3D diamond detector for particle physics applications. A femto-second laser was used to create arrays of graphitic columns in single crystal and polycrystalline diamond samples, these conductive columns are a few microns in diameter and create a 3D readout similar to that produced in silicon. Creating a 3D...
Nicola Zorzi (FBK)
Double-side 3D sensor technology developed at FBK (Trento, Italy) in collaboration with INFN turned out successful not only in the performance demonstration of prototypes but also to supply good quality detectors for the ATLAS-IBL with a good fabrication yield. Although obtained results are satisfactory, the performance of these devices can be further improved and a simplification of the...
Dr Marco Povoli (University of Trento)
One of the required features of tracking devices for the futures upgrades of LHC experiments will be a reduced thickness, in order to decrease the material budget and to achieve lower multiple scattering. The main drawback related to a reduced sensor thickness is a decrease in the total sensing volume, which translates in a large reduction of the signal available for particle detection. To...
Dr Giulio Pellegrini (IMB-CNM-CSIC)
By 2020 a two stage upgrade of the accelerator complex, the High Luminosity-LHC (HL-LHC), will increase the instantaneous luminosities up to a factor of ten compared to the current design. The particle fluxes at CMS experiment will increment substantially with special impact on the inner tracking detector which will be subjected to large occupancies and radiation damage. In order to cope with...
Modelling of charge collection in 3D silicon detectors is described. The modelling is extended to irradiated devices using the deep acceptor model and combined with avalanche multiplication. Modelling of charge transport in the electrodes for full-3D devices is described. The results are compared to data from test beams and also x-ray scans at the Diamond synchrotron at the Rutherford Appleton...
CMOS processes are cost-efficient and commercially available. We explore the concept of using a deep-submicron HV CMOS process to produce a drop-in replacement for traditional radiation hard silicon sensors. Unlike fully integrated monolithic active pixel sensors (MAPS), such active sensors still require a traditional (pixel or strip) readout chip to receive and organize the data from the...
Serena Mattiazzo (Universita e INFN (IT))
The Silicon On Insulator (SOI) technology is one of the leading technologies for the realization of monolithic pixel sensors on high resistivity wafers. A commercial, deep-submicron SOI process by LAPIS, coupled with high-resistivity silicon substrates, is made available through KEK. In this process, a full CMOS circuitry is integrated in a 40 nm thick layer on top of each pixel. Thanks to the...
Dr Alberto Gola (Fondazione Bruno Kessler)
In this work we describe the work that we have carried out at FBK, aimed at the optimization of the timing performance of large-area SiPMs coupled to LYSO crystals, in the detection of 511 keV gamma photons. We focus on the role of the detector noise, namely its Dark Count Rate (DCR), and on possible baseline compensation techniques for the reduction of its effects on the Coincidence Resolving...
Dr Manuel Dionisio Rolo (LIP and INFN Torino)
The high gain and fast rise time of compact Silicon Photomultiplier matrices paved the way for the development of instrumentation with very stringent timing requirements, such as Time-of-Flight PET. Fast, low-noise and low-power integrated front-end electronics is a key factor to achieve the envisaged time resolution. We discuss methods and circuit topologies that target this performance,...
Prof. Alberto Quaranta (Department of Industrial Engineering)
The aim of HYDE (HYbrid DEtectors for neutrons) project, financed by INFN V commission, is the realization of detectors for neutrons made by 3D systems coupled to polysiloxane based scintillators suitable to convert the energy of fast and slow neutrons both in scintillation light and in reaction products detectable by the patterned silicon detector. Polysiloxane scintillators are cheap,...
Anna Bergamaschi (PSI)
An overview of the microstrip and pixel detectors developed at the SLS is presented together with example applications. Parallel to the successful development of large area single photon counting systems for synchrotron radiation experiments (MYTHEN, EIGER), charge integrating detectors with extended dynamic range and single photon resolution are being developed to satisfy the strict...
Ulrich Parzefall (Albert-Ludwigs-Universitaet Freiburg (DE))
The Real Time Wide Area Radiation Surveillance System (REWARD) is a novel mobile system for radiation detection and monitoring based on the integration of new miniaturized solid-state radiation sensors: a CdZnTe detector for gamma radiation and a neutron detector based on novel silicon technologies. The sensing unit also includes a wireless communication interface to send the data remotely to...
9. Studies on enhanced silicon detector cooling and integration through microfabrication techniques at CERN
Giulia Romagnoli (Universita e INFN (IT)), Paolo Petagna (CERN)
Ultra-thin liquid micro-fluidic silicon devices have been recently selected for the active thermal management of the GigaTracker detector in the NA62 experiment at CERN. Following this first successful application, further studies have been launched on two-phase flow devices for the upgrades of the ALICE Inner Tracker System (room temperature and low pressure) and LHCb Vertex Locator (low...
Sabina Ronchin (FBK)
This talk reports the development of an integrated microchannels cooling into silicon devices. The microchannels are formed in silicon using isotropic SF6 plasma etching in a DRIE (deep reactive ion etcher), after the DRIE process the channels are sealed by depositing a PECVD silicon oxide. We have realized on a silicon wafer microchannels with different geometries and hydraulic diameters. We...
Pietro Maoddi (CERN)
Within the microScint project in the CERN Physics Department a new generation of microfabricated particle detectors based on liquid scintillators is being developed. These novel devices consist of dense arrays of microfluidic channels acting as optical waveguides and feature high spatial resolution and increased radiation resistance, while minimizing the material budget. Experimental...
14. 3D-S: A fast, high resolution, low-mass, detector with embedded cooling and internal charge multiplication capability
Dr Cinzia Da Via (University of Manchester (GB))
3D silicon sensors have completed the key milestones set by the 3DATLAS R&D collaboration and are now industrially fabricated. A new challenge is now being faced for the HL-LHC which will require a totally new approach in sensor fabrication. 3DS is an innovative fast, low mass modular system where all components, including cooling and active edges, are fabricated and are vertically integrated...
Sabina Ronchin (FBK)
A new hybrid structure of a 3D silicon sensor coupled to a scintillator for the detection of fast and thermal neutrons is presented. The device is based on a PIN diode with DRIE-etched cavities filled with polysiloxane acting as a scintillator, while the signal is transferred to the other side by means of TSV. The structure increases the active interaction volume for neutron, with respect...
I. Rashevskaya (INFN Trieste)
The demand for minimizing the material budget of tracking detectors, especially those closer to the interaction region, has been addressed by fabricating pixel sensors on 100 µm thin epitaxial material. After processing, the thick, heavily doped substrate can be thinned down, leaving only a very thin layer, necessary for properly terminating the depletion region. In order to reduce the...
Gabriele Giacomini (Fondazione Bruno Kessler)
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hardness and cost effectiveness. The talk reports on the development of novel n-on-p edgeless planar...
Hartmut Sadrozinski (SCIPP, UC santa Cruz)
We will report on recent results on slim edges using the Scribe-Cleave-Passivate SCP method