Speaker
Gabriele Giacomini
(Fondazione Bruno Kessler)
Description
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hardness and cost effectiveness.
The talk reports on the development of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench concept for the reduction of the dead area at the periphery of the device.
Electrical characterization of the sensors will be presented, after outlining the project and commenting the sensors simulation studies.
Author
Marco Bomben
(Univ. P. et Marie Curie (Paris VI) (FR))
Co-authors
Alessandro La Rosa
(Universite de Geneve (CH))
Alvise Bagolini
(FBK)
Gabriele Giacomini
(Fondazione Bruno Kessler)
Giovanni Calderini
(Univ. P. et Marie Curie (Paris VI) (FR))
Giovanni Marchiori
(LPNHE Paris)
Luciano Bosisio
(Universita e INFN (IT))
Maurizio Boscardin
(FBK Trento)
Nicola Zorzi
(Fondazione Bruno Kessler - FBK)
