Speaker
Gregor Kramberger
(Jozef Stefan Institute (SI))
Description
Silicon diodes with special design of the implant - so called ``spaghetti diodes'' - were used to study the impact of implantation process on charge multiplication after irradiations to very large equivalent fluences of 8e16 cm-2. The samples were found to work even at this unprecedented levels of irradiation. Different implantation processes were implemented on samples for studying the impact of implantation on charge multiplication. The spaghetti diodes of different thicknesses were also compared to conventional
strip detectors and normal pad detectors in order to determine the impact of different weighting field on the collected charge.
Author
Gregor Kramberger
(Jozef Stefan Institute (SI))
Co-authors
Igor Mandic
(Jozef Stefan Institute (SI))
Marko Mikuz
(Jozef Stefan Institute (SI))
Dr
Marko Zavrtanik
(Jozef Stefan Institute (SI))
Vladimir Cindro
(Jozef Stefan Institute (SI))
