8th "Trento" Workshop on Advanced Silicon Radiation Detectors (3D and p-type)

Session

CMOS Sensors and Electronics

19 Feb 2013, 15:00

"Stringa" Conference Hall (FBK, Trento)

Conveners

CMOS Sensors and Electronics

• Nanni Darbo (Universita e INFN (IT))

18. First experience with radiation-hard active sensors in 180 nm HV CMOS technology

Simon Feigl

19/02/2013, 15:00

CMOS processes are cost-efficient and commercially available. We explore the concept of using a deep-submicron HV CMOS process to produce a drop-in replacement for traditional radiation hard silicon sensors. Unlike fully integrated monolithic active pixel sensors (MAPS), such active sensors still require a traditional (pixel or strip) readout chip to receive and organize the data from the...

21. A thin and fully depleted monolithic pixel sensor in SOI technology

Serena Mattiazzo (Universita e INFN (IT))

19/02/2013, 15:20

The Silicon On Insulator (SOI) technology is one of the leading technologies for the realization of monolithic pixel sensors on high resistivity wafers. A commercial, deep-submicron SOI process by LAPIS, coupled with high-resistivity silicon substrates, is made available through KEK. In this process, a full CMOS circuitry is integrated in a 40 nm thick layer on top of each pixel. Thanks to the...

40. Optimization of timing performance of large-area FBK SiPMs in the scintillation light readout

Dr Alberto Gola (Fondazione Bruno Kessler)

19/02/2013, 15:40

In this work we describe the work that we have carried out at FBK, aimed at the optimization of the timing performance of large-area SiPMs coupled to LYSO crystals, in the detection of 511 keV gamma photons. We focus on the role of the detector noise, namely its Dark Count Rate (DCR), and on possible baseline compensation techniques for the reduction of its effects on the Coincidence Resolving...

38. Integrated Circuit Design for Time-of-Flight PET with Silicon Photomultiplier

Dr Manuel Dionisio Rolo (LIP and INFN Torino)

19/02/2013, 16:00

The high gain and fast rise time of compact Silicon Photomultiplier matrices paved the way for the development of instrumentation with very stringent timing requirements, such as Time-of-Flight PET. Fast, low-noise and low-power integrated front-end electronics is a key factor to achieve the envisaged time resolution. We discuss methods and circuit topologies that target this performance,...