Name: 12th RD50 Workshop
Start: 2008-06-02T08:00:00+02:00
End: 2008-06-04T16:00:00+02:00
Location: Ljubljana, Slovenia

12th RD50 Workshop

from Monday 2 June 2008 (08:00) to Wednesday 4 June 2008 (16:00)

Monday 2 June 2008

08:00 Registration

08:00 - 09:00
09:00 Workshop Welcome
09:00 - 09:30
Contributions

09:00 Welcome - Jadran Lenarčič (Director of Jožef Stefan Institute) Marko Mikuz (University of Ljubljana)

09:15 Introduction - Mara Bruzzi (INFN and University of Florence) Michael Moll (CERN) Vladimir Cindro (Jozef Stefan Institute)
09:30 Defect and Material Characterization
09:30 - 13:30
Contributions

09:30 Overview of results from the WODEAN collaboration - Gordon Davies (King's College London)

10:00 Analysis of deep level system transformation by photoionization spectroscopy - Juozas Vaitkus (Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)

10:20 Study of cluster related effects in n-irradiated Epi-Do and MCz diodes - Alexandra Junkes (Unversity of Hamburg, Germany)

11:10 Fluence and isochronal anneal dependent variations of recombination and DLTS characteristics in neutron and proton irradiated MCz , FZ and epi-Si structures - Juozas Vaitkus (Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)

11:30 Discussion Session on Defect and Material Characterization - Gordon Davies (King's College London) Mara Bruzzi (INFN and University of Florence)
13:30 Defect Engineering & Pad Detector Characterization I
13:30 - 16:30
Contributions

13:30 Electrical characterization of p- and n- type 150um epi-Si diodes irradiated by protons and neutrons - Volodymyr Khomenkov (Hamburg University)

13:50 Annealing studies on MCz after 23 GeV proton irradiation and CCE of 150um epitaxial silicon devices - Katharina Kaska (CERN)

14:10 Systematic TCT Investigation of Equal-Double-Junctions in 24 GeV Proton Irradiated MCZ n and p-type Si Detectors - Jaakko Harkonen (HIP)

14:30 On MCz SCSI after 24 GeV/c proton irradiation - Donato Creanza (University/INFN Bari)

15:20 Comparison of proton damage in thin FZ, MCz and epitaxial silicon detectors - Doris Eckstein (Hamburg University)

15:40 C-V/IV and CCE measurements of MCz and FZ p and n type diodes after mixed irradiations - Gregor Kramberger (Jozef Stefan Institute)

16:00 Discussion Session: Defect Engineering & Pad Detectors (MCZ, EPI, FZ) - Eckhart Fretwurst (Unversity of Hamburg, Germany) Gregor Kramberger (Jozef Stefan Institute)
16:30 Welcome Drink

16:30 - 18:30
18:30 Collaboration Board Meeting
18:30 - 19:30
Contributions

18:30 RD50 - Spokespersons Report - Mara Bruzzi (INFN and University of Florence) Michael Moll (CERN)

18:50 RD50 funding request - Fabrication and testing of new AC coupled 3D stripixel detectors - Giulio Pellegrini (Centro Nacional de Microelectronica CNM-IMB-CSIC)
Tuesday 3 June 2008
09:00 Pad Detector Characterization II
09:00 - 10:40
Contributions

09:00 Observation of Gamma Irradiation-Induced Suppression of Reverse Annealing in Neutron Irradiated MCZ Si Detectors - Jessica Metcalfe (University of New Mexico)

09:20 Can Li passivate radiation damage in Si? - Chris Parkes (Department of Physics and Astronomy)

09:40 Discussion: Pad Detector Characterization II (Simulations) - Gregor Kramberger (Jozef Stefan Institute)
10:40 Full Detector Systems
10:40 - 15:00
Contributions

10:40 Summary: 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies) - Lozano Manuel (CNM)

11:10 Beam telescope for testing p- and n-type detectors - Panja-Riina Luukka (Helsinki Institute of Physics HIP)

11:30 Irradiated MCz sensors for a testbeam - Martin Frey (IEKP, Universität Karlsruhe)

11:50 Charge collection measurements on MICRON RD50 strip detectors and diodes irradiated with protons, pions and neutrons - Gregor Kramberger (Jozef Stefan Institute)

13:40 New CCE results with microstrip detectors made on various substrates - Gianluigi Casse (Department of Physics)

14:00 Measurement of charge collection in p-type microstrip sensors with SCT128 chip - Igor Mandic (Jožef Stefan Institute)

14:20 Discussion on Full Detector Systems - Gianluigi Casse (Department of Physics)
15:00 Excursion

15:00 - 18:30

18:30 Workshop dinner

18:30 - 22:30
Wednesday 4 June 2008
09:00 3D detectors & New structures
09:00 - 11:30
Contributions

09:00 Developement of an Indium Bump Bonding Process for Silicon Pixel Detectors at PSI - Tilman Rohe (Nuclear and Particle Physics Department)

09:20 Last results on 3D detectors fabrication and measurments - Giulio Pellegrini (Centro Nacional de Microelectronica CNM-IMB-CSIC)

09:40 3D Detector Testing - Chris Parkes (University of Glasgow)

10:30 Status of 3D Detector R&D in Freiburg - Ulrich Parzefall (Fakultaet fuer Physik)

10:50 Discussion on 3D detectors & New Structures - Chris Parkes (Glasgow)
11:30 Visit to Ljubljana Research Reactor

11:30 - 15:30

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