12th RD50 Workshop

Session

Defect Engineering & Pad Detector Characterization I

2 Jun 2008, 13:30

Ljubljana, Slovenia

21. Electrical characterization of p- and n- type 150um epi-Si diodes irradiated by protons and neutrons

Volodymyr Khomenkov (Hamburg University)

02/06/2008, 13:30

Defect Engineering and Pad Detector Characterization

Epi-Si 150 um thick diodes on p- and n-type bulk were studied after irradiation by 24 Gev/c protons (CERN PS) and reactor neutrons (Ljubljana) up to equivalent fluence of several times E15/cm2 and following isothermal annealing at 80C.

2. Annealing studies on MCz after 23 GeV proton irradiation and CCE of 150um epitaxial silicon devices

Mrs Katharina Kaska (CERN)

02/06/2008, 13:50

Defect Engineering and Pad Detector Characterization

MCz (n- and p-type) and FZ (n-type) diodes were irradiated with 23 GeV protons and investigated with CV,IV and CCE (beta-source, 2mus shaping) measurements. Isothermal annealing studies at 80° C were performed on a subset of samples irradiation with 3.5e14 protons/cm2. Finally, these detectors were used for isochronal annealing studies between 100° C and 220° C, for which the charge...

19. Systematic TCT Investigation of Equal-Double-Junctions in 24 GeV Proton Irradiated MCZ n and p-type Si Detectors

Dr Jaakko Harkonen (HIP)

02/06/2008, 14:10

Defect Engineering and Pad Detector Characterization

Systematic TCT studies (both electron and hole current shapes are measured for each sample) have been carried out on three sets of samples irradiated by 24 GeV protons to fluences ranging from 1.6x1014 to 2.4x1015 p/cm2 (and after 22-day room temperature beneficial anneal): 1) MCZ n-type Si detectors; 2) MCZ p-type Si detectors; and 3) FZ n-type Si detectors (control sample set). For the...

32. On MCz SCSI after 24 GeV/c proton irradiation

Donato Creanza (University/INFN Bari)

02/06/2008, 14:30

Defect Engineering and Pad Detector Characterization

Several MCz diodes from the SMART production, of both n- and p-type, have been irradiated on the 24 GeV/c proton beam at CERN up to a fluence of 1.59 1015 neq.In the framework of a common RD50 research program, electrical characterization and TCT studies have been performed as a function of the annealing time. All irradiated samples show a clear double junction effect. Both annealing and TCT...

22. Comparison of proton damage in thin FZ, MCz and epitaxial silicon detectors

Doris Eckstein (Hamburg University)

02/06/2008, 15:20

Defect Engineering and Pad Detector Characterization

We present results on 24 GeV/c proton irradiated thin n-type FZ (50 µm, 100 µm), MCz (100 µm), epitaxial (72, 100, 150 µm, standard and oxygenated) pad detectors. Annealing experiments at 80°C have been performed. The extracted macroscopic damage parameters and charge collection measurements with alpha particles will be presented.

11. C-V/IV and CCE measurements of MCz and FZ p and n type diodes after mixed irradiations

Gregor Kramberger (Jozef Stefan Institute)

02/06/2008, 15:40

Defect Engineering and Pad Detector Characterization

The set of MCz and Fz p and n type diodes was irradiated first with fast charged hadrons (200 MeV pions or 24 GeV protons) and afterwards with reactor neutrons. The measurements showed that damage of both irradiation particles adds for Neff and leakage current. The space charge of MCz-n detectors after charged hadron irradiations should be positive as the additional irradiation with neutrons...

26. Discussion Session: Defect Engineering & Pad Detectors (MCZ, EPI, FZ)

Eckhart Fretwurst (Unversity of Hamburg, Germany), Gregor Kramberger (Jozef Stefan Institute)

02/06/2008, 16:00