12th RD50 Workshop

Speaker List

• Mara Bruzzi (INFN and University of Florence)
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    Discussion Session on Defect and Material Characterization

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    Introduction

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    RD50 - Spokespersons Report

• Gianluigi Casse (Department of Physics)
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    Discussion on Full Detector Systems

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    New CCE results with microstrip detectors made on various substrates

• Vladimir Cindro (Jozef Stefan Institute)
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    Introduction

• Donato Creanza (University/INFN Bari)
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    On MCz SCSI after 24 GeV/c proton irradiation

• Gordon Davies (King's College London)
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    Discussion Session on Defect and Material Characterization

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    Overview of results from the WODEAN collaboration

• Lakhdar Dehimi (Mohamed Khider University)
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    Talk cancelled

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    Talk cancelled

• Doris Eckstein (Hamburg University)
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    Comparison of proton damage in thin FZ, MCz and epitaxial silicon detectors

• Eckhart Fretwurst (Unversity of Hamburg, Germany)
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    Discussion Session: Defect Engineering & Pad Detectors (MCZ, EPI, FZ)

• Martin Frey (IEKP, Universität Karlsruhe)
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    Irradiated MCz sensors for a testbeam

• Jaakko Harkonen (HIP)
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    Systematic TCT Investigation of Equal-Double-Junctions in 24 GeV Proton Irradiated MCZ n and p-type Si Detectors

• Alexandra Junkes (Unversity of Hamburg, Germany)
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    Study of cluster related effects in n-irradiated Epi-Do and MCz diodes

• Katharina Kaska (CERN)
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    Annealing studies on MCz after 23 GeV proton irradiation and CCE of 150um epitaxial silicon devices

• Volodymyr Khomenkov (Hamburg University)
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    Electrical characterization of p- and n- type 150um epi-Si diodes irradiated by protons and neutrons

• Gregor Kramberger (Jozef Stefan Institute)
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    Discussion Session: Defect Engineering & Pad Detectors (MCZ, EPI, FZ)

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    Discussion: Pad Detector Characterization II (Simulations)

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    C-V/IV and CCE measurements of MCz and FZ p and n type diodes after mixed irradiations

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    Charge collection measurements on MICRON RD50 strip detectors and diodes irradiated with protons, pions and neutrons

• Jadran Lenarčič (Director of Jožef Stefan Institute)
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    Welcome

• Panja-Riina Luukka (Helsinki Institute of Physics HIP)
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    Beam telescope for testing p- and n-type detectors

• Igor Mandic (Jožef Stefan Institute)
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    Measurement of charge collection in p-type microstrip sensors with SCT128 chip

• Lozano Manuel (CNM)
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    Summary: 3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

• Jessica Metcalfe (University of New Mexico)
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    Observation of Gamma Irradiation-Induced Suppression of Reverse Annealing in Neutron Irradiated MCZ Si Detectors

• Marko Mikuz (University of Ljubljana)
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    Welcome

• Michael Moll (CERN)
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    Introduction

• Michael Moll (CERN)
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    RD50 - Spokespersons Report

• Chris Parkes (Department of Physics and Astronomy)
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    Discussion on 3D detectors & New Structures

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    Can Li passivate radiation damage in Si?

• Chris Parkes (University of Glasgow)
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    3D Detector Testing

• Ulrich Parzefall (Fakultaet fuer Physik)
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    Status of 3D Detector R&D in Freiburg

• Giulio Pellegrini (Centro Nacional de Microelectronica CNM-IMB-CSIC)
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    Last results on 3D detectors fabrication and measurments

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    RD50 funding request - Fabrication and testing of new AC coupled 3D stripixel detectors

• Tilman Rohe (Nuclear and Particle Physics Department)
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    Developement of an Indium Bump Bonding Process for Silicon Pixel Detectors at PSI

• Juozas Vaitkus (Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)
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    Analysis of deep level system transformation by photoionization spectroscopy

• Juozas Vaitkus (Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)
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    Fluence and isochronal anneal dependent variations of recombination and DLTS characteristics in neutron and proton irradiated MCz , FZ and epi-Si structures