13:30
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Defect Engineering & Pad Detector Characterization I
(until 16:30)
()
|
13:30
|
Electrical characterization of p- and n- type 150um epi-Si diodes irradiated by protons and neutrons
-
Volodymyr Khomenkov
(Hamburg University)
()
|
13:50
|
Annealing studies on MCz after 23 GeV proton irradiation and CCE of 150um epitaxial silicon devices
- Mrs
Katharina Kaska
(CERN)
()
|
14:10
|
Systematic TCT Investigation of Equal-Double-Junctions in 24 GeV Proton Irradiated MCZ n and p-type Si Detectors
- Dr
Jaakko Harkonen
(HIP)
()
|
14:30
|
On MCz SCSI after 24 GeV/c proton irradiation
-
Donato Creanza
(University/INFN Bari)
()
|
14:50
|
--- Coffee Break ---
|
15:20
|
Comparison of proton damage in thin FZ, MCz and epitaxial silicon detectors
-
Doris Eckstein
(Hamburg University)
()
|
15:40
|
C-V/IV and CCE measurements of MCz and FZ p and n type diodes after mixed irradiations
-
Gregor Kramberger
(Jozef Stefan Institute)
()
|
16:00
|
Discussion Session: Defect Engineering & Pad Detectors (MCZ, EPI, FZ)
-
Eckhart Fretwurst
(Unversity of Hamburg, Germany)
Gregor Kramberger
(Jozef Stefan Institute)
()
|
16:30
|
Welcome Drink
(until 18:30)
()
|
18:30
|
Collaboration Board Meeting
(until 19:30)
()
|
18:30
|
RD50 - Spokespersons Report
-
Michael Moll
(CERN)
Mara Bruzzi
(INFN and University of Florence)
()
|
18:50
|
RD50 funding request - Fabrication and testing of new AC coupled 3D stripixel detectors
-
Giulio Pellegrini
(Centro Nacional de Microelectronica CNM-IMB-CSIC)
()
|