Speaker
Marko Mikuz
(Jozef Stefan Institute (SI))
Description
Raising the electric field so as to provoke charge multiplication of electrons has enabled silicon to provide measurable signals from sensors irradiated to unprecedented radiation levels up to 1.6x10^17 n_eq/cm^2, making it a contender also for HL-LHC very forward tracking and calorimneters. A simple scaling of collected charge vs. applied bias has been established experimentally for fluences above 10^15 n_eq/cm^2 for planar strip sensors. Field investigations by edge-TCT have been carried out to 10^16, 10^17 is in the planning. Distinct features as a SCR and ENB with a sizable electric field were observed. Leakage current generation seems confined to the SCR, therefore the observed departure from linear scaling of leakage current vs. fluence at fixed voltage is not surprising. While experimental results are obtained with strip detectors, their scaling to pixel geometry will be discussed, and expected differences pointed out.
Primary author
Marko Mikuz
(Jozef Stefan Institute (SI))
Co-authors
Gregor Kramberger
(Jozef Stefan Institute (SI))
Igor Mandic
(Jozef Stefan Institute (SI))
Marko Zavrtanik
(Jozef Stefan Institute (SI))
Vladimir Cindro
(Jozef Stefan Institute (SI))
