Name: 24th RD50 Workshop (Bucharest)
Start: 2014-06-11T08:15:00+02:00
End: 2014-06-13T23:00:00+02:00
Location: Bucharest

24th RD50 Workshop (Bucharest)

from Wednesday 11 June 2014 (08:15) to Friday 13 June 2014 (23:00)

Monday 9 June 2014
Tuesday 10 June 2014
Wednesday 11 June 2014

08:15

08:15 - 09:00
09:00
09:00 - 13:00
Contributions

09:00 Workshop opening - Ionut Enculescu (Director of NIMP, Bucharest)

09:05 Workshop opening - Ioana Pintilie (NIMP Bucharest-Magurele, Romania) Michael Moll (CERN)

09:10 Investigation of point and extended defects in electron irradiated silicon – dependence on the particle energy - Roxana Radu (National Institute of Materials Physics NIMP, Bucharest, Romania)

09:30 Effect of background impurities and electronic excitation on the behavior of radiation induced interstitial boron complexes - Leonid Makarenko (B)

09:50 A<sub>Si</sub>-Si<sub>i</sub> defect as possible origin of electronically activated degradation of boron and indium doped silicon - Kevin Lauer (CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH)

10:10 Electron Induced Damage in Silicon - TRIM and TCAS Simulations - Gunnar Lindstroem (University of Hamburg)

11:00 Modelling Vacancy-Interstitial Clusters and their effect on on Carrier Transport in Silicon - Ernestas Zasinas (Vilnius University)

11:20 ESR investigation of paramagnetic point defects in O doped crystalline Si-FZ irradiated with 27 MeV electrons - S.V. Nistor (NIMP - Magurele (RO))

11:40 High resolution transmission electron microscopy (HRTEM) investigations of silicon irradiated with high energy electrons - Leona Nistor (NIMP Bucharest-Magurele (RO))

12:00 Discussion: Defect and Material Characterization - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
13:00 Lunch
Lunch
13:00 - 14:00
14:00
14:00 - 16:00
Contributions

14:00 Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon - Christian Scharf (Hamburg University (DE))

14:20 TCT, eTCT and I-DLTS measurement setups at the CERN SSD Lab - Christian Gallrapp (CERN)

14:40 CCE and Edge_TCT measurements with ATLAS 07 and ATLAS 12 detectors - Vladimir Cindro (Jozef Stefan Institute (SI))

15:00 Status of Silicon Strip Sensor Measurements at Liverpool - Sven Wonsak (University of Liverpool (GB))

15:20 Heavily irradiated thin n-in-p planar pixel sensors and status of the new common RD50 productions - Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

15:40 Status of the new irradiation facilities in the CERN EAST HALL - Michael Moll (CERN)
16:00 Coffee
Coffee
16:00 - 16:30

19:00

19:00 - 21:00
Thursday 12 June 2014
09:00
09:00 - 13:00
Contributions

09:00 SiMS measurements & Simulation, Varied bias rail geometry structures characterization and TCAD simulation - Vagelis Gkougkousis (Universite de Paris-Sud 11 (FR))

09:20 A method to model the accumulation of oxide charge with fluence in an irradiated MSSD - Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

09:40 Simulations of Hadron Irradiation Effects for Si Sensors Using Effective Bulk Damage Model - Ranjeet Ranjeet (University of Delhi (IN))

10:00 Trapping in p-on-n silicon sensors at fluences relevant for the HL-LHC - Thomas Poehlsen (University of Hamburg)

11:00 Lorentz angle measurement on ATLAS silicon microstrip sensors - Eda Yildirim (Deutsches Elektronen-Synchrotron (DE))

11:20 Edge-TCT studies of non-irradiated HVCMOS sensors - Gregor Kramberger (Jozef Stefan Institute (SI))

11:40 Electric field measurement in irradiated silicon sensors by means of simulations and beam tests [Skype presentation] - Igor Rubinskiy (DESY) Marco Bomben (Centre National de la Recherche Scientifique (FR))

12:00 Impact of Low-Dose Electron Irradiation on the Charge Collection of n+p Silicon Strip Sensors - Thomas Poehlsen (University of Hamburg)

12:20 Discussion Session: Simulations and Sensor Characterizations
13:00 Lunch
Lunch
13:00 - 14:00

14:30

14:30 - 20:00

20:00

20:00 - 23:55
Friday 13 June 2014
09:00
09:00 - 13:00
Contributions

09:00 Radiation hardness of Low Gain Amplification Detectors (LGAD) - Gregor Kramberger (Jozef Stefan Institute (SI))

09:20 Segmented LGAD - Hartmut Sadrozinski (SCIPP, UC santa Cruz)

09:40 Fabrication of 200um thick p and n- type pad detectors with enhanced multi-plication effect - Giulio Pellegrini (CNM-IMB-CSIC)

10:00 Timing properties of UFSD - Nicolo Cartiglia (Universita e INFN (IT))

11:00 Preliminary results on proton irradiated LGAD PAD detectors - Virginia Greco (IMB-CNM-CSIC)

11:20 A Long Term Study of Charge Multiplication - Ulrich Parzefall (Albert-Ludwigs-Universitaet Freiburg (DE))

11:40 Discussion on LGAD - Virginia Greco (Instituto de Fisica Corpuscular (ES))
13:00 Lunch
Lunch
13:00 - 14:00
14:00
14:00 - 19:00
Contributions

14:00 Beam test of thin epitaxial silicon strip sensors for the CMS phase II pixel upgrade - Matteo Centis Vignali (Hamburg University (DE))

14:20 Characterisation and testing of ATLAS FE-I4 devices for the HL-LHC - Clara Nellist (LAL-Orsay (FR))

14:40 Slim-edge and non-uniformly irradiated 3D silicon pixel detectors for forward physics experiments - Joern Lange (IFAE Barcelona)

15:00 Investigation of radiation hardness of alumina layer for slim edge devices - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

15:20 Evaluation of the Low Resistance Strip Sensors Fabricated at CNM - Miguel Ullan Comes (Instituto de Fisica Corpuscular (ES))

15:40 Studies of radiation damage in the LHCb Vertex Locator after Run I. - . On behalf of the LHCb VELO group (.) Agnieszka Oblakowska-Mucha (AGH University of Science and Technology (PL))

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