24th RD50 Workshop (Bucharest)

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Sessions*

Dinner

Cocktail Reception

Collaboration Board

Bucharest City Tour

Session 1 - Defect and Material Characterization

Welcome Coffee & Registration

Session 3 - TCAD simulations

Session 2 - Detector Characterization

Session

Session 4 - Sensors with intrinsic gain - LGAD

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Contributions*

A Long Term Study of Charge Multiplication (in session "Session 4 - Sensors with intrinsic gain - LGAD")

A method to model the accumulation of oxide charge with fluence in an irradiated MSSD (in session "Session 3 - TCAD simulations")

A_Si-Si_i defect as possible origin of electronically activated degradation of boron and indium doped silicon (in session "Session 1 - Defect and Material Characterization")

Beam test of thin epitaxial silicon strip sensors for the CMS phase II pixel upgrade (in session "Session")

CCE and Edge_TCT measurements with ATLAS 07 and ATLAS 12 detectors (in session "Session 2 - Detector Characterization")

Characterisation and testing of ATLAS FE-I4 devices for the HL-LHC (in session "Session")

Discussion on LGAD (in session "Session 4 - Sensors with intrinsic gain - LGAD")

Discussion Session: Simulations and Sensor Characterizations (in session "Session 3 - TCAD simulations")

Discussion: Defect and Material Characterization (in session "Session 1 - Defect and Material Characterization")

Edge-TCT studies of non-irradiated HVCMOS sensors (in session "Session 3 - TCAD simulations")

Effect of background impurities and electronic excitation on the behavior of radiation induced interstitial boron complexes (in session "Session 1 - Defect and Material Characterization")

Electric field measurement in irradiated silicon sensors by means of simulations and beam tests [Skype presentation] (in session "Session 3 - TCAD simulations")

Electron Induced Damage in Silicon - TRIM and TCAS Simulations (in session "Session 1 - Defect and Material Characterization")

ESR investigation of paramagnetic point defects in O doped crystalline Si-FZ irradiated with 27 MeV electrons (in session "Session 1 - Defect and Material Characterization")

Evaluation of the Low Resistance Strip Sensors Fabricated at CNM (in session "Session")

Fabrication of 200um thick p and n- type pad detectors with enhanced multi-plication effect (in session "Session 4 - Sensors with intrinsic gain - LGAD")

Heavily irradiated thin n-in-p planar pixel sensors and status of the new common RD50 productions (in session "Session 2 - Detector Characterization")

High resolution transmission electron microscopy (HRTEM) investigations of silicon irradiated with high energy electrons (in session "Session 1 - Defect and Material Characterization")

Impact of Low-Dose Electron Irradiation on the Charge Collection of n+p Silicon Strip Sensors (in session "Session 3 - TCAD simulations")

Investigation of point and extended defects in electron irradiated silicon – dependence on the particle energy (in session "Session 1 - Defect and Material Characterization")

Investigation of radiation hardness of alumina layer for slim edge devices (in session "Session")

Lorentz angle measurement on ATLAS silicon microstrip sensors (in session "Session 3 - TCAD simulations")

Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon (in session "Session 2 - Detector Characterization")

Modelling Vacancy-Interstitial Clusters and their effect on on Carrier Transport in Silicon (in session "Session 1 - Defect and Material Characterization")

Preliminary results on proton irradiated LGAD PAD detectors (in session "Session 4 - Sensors with intrinsic gain - LGAD")

Radiation hardness of Low Gain Amplification Detectors (LGAD) (in session "Session 4 - Sensors with intrinsic gain - LGAD")

Segmented LGAD (in session "Session 4 - Sensors with intrinsic gain - LGAD")

SiMS measurements & Simulation, Varied bias rail geometry structures characterization and TCAD simulation (in session "Session 3 - TCAD simulations")

Simulations of Hadron Irradiation Effects for Si Sensors Using Effective Bulk Damage Model (in session "Session 3 - TCAD simulations")

Slim-edge and non-uniformly irradiated 3D silicon pixel detectors for forward physics experiments (in session "Session")

Status of Silicon Strip Sensor Measurements at Liverpool (in session "Session 2 - Detector Characterization")

Status of the new irradiation facilities in the CERN EAST HALL (in session "Session 2 - Detector Characterization")

Studies of radiation damage in the LHCb Vertex Locator after Run I. (in session "Session")

TCT, eTCT and I-DLTS measurement setups at the CERN SSD Lab (in session "Session 2 - Detector Characterization")

Timing properties of UFSD (in session "Session 4 - Sensors with intrinsic gain - LGAD")

Trapping in p-on-n silicon sensors at fluences relevant for the HL-LHC (in session "Session 3 - TCAD simulations")

Workshop opening (in session "Session 1 - Defect and Material Characterization")

Workshop opening (in session "Session 1 - Defect and Material Characterization")

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Events scheduled on*

11/06/2014

12/06/2014

13/06/2014

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